Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

1990 ◽  
Vol 182 ◽  
Author(s):  
R. Pandya ◽  
K. Shahzad
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Qualitative Explanation ◽  
Silicon Thin Films ◽  
Pl Spectrum ◽  
Recombination Velocity ◽  
Quartz Substrates

AbstractPhotoluminescence (PL) measurements have been carried out in hydrogenated and as deposited polycrystalline silicon thin films deposited on quartz substrates. Behavior of the PL spectrum as a function of temperature and intensity in the hydrogenated samples is reported. A mechanism that provides a qualitative explanation for the observed PL results is described. In the unhydrogenated sample the signal was much weaker and we were unable to observe any signals over an appreciable range of intensity and temperatures. The cause for much lower signals in the unhydrogenated sample is most likely due to higher surface recombination velocity.

Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

2008 ◽  
Vol 47 (1) ◽  
pp. 54-58 ◽  
Author(s):  
Kuninori Kitahara ◽  
Hiroya Ogasawara ◽  
Junji Kambara ◽  
Mitsunori Kobata ◽  
Yasutaka Ohashi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Chemical Etching ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Optical characterization of polycrystalline silicon thin films

1996 ◽  
Author(s):  
William A. McGahan ◽  
Blaine R. Spady ◽  
Blaine D. Johs ◽  
Olivier Laparra
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Optical Characterization ◽  
Silicon Thin Films

Scanning-laser-microscope measurements of minority-carrier diffusion length and surface recombination velocity in polycrystalline silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 870-875 ◽  
Author(s):  
S. Damaskinos ◽  
A. E. Dixon
Keyword(s):  
Polycrystalline Silicon ◽  
Minority Carrier ◽  
Surface Recombination ◽  
Beam Intensity ◽  
Scanning Laser ◽  
Surface Recombination Velocity ◽  
Minority Carrier Diffusion Length ◽  
Spatially Resolved ◽  
Recombination Velocity ◽  
P Type

A scanning laser microscope was used to study the electronic and recombination properties at grain boundaries of both n- and p-type Wacker polycrystalline silicon in a spatially resolved photoconductivity experiment. The light energy falling on the samples was varied over five orders of magnitude from 10−1 to 10−6 mW. For p-type material the measured L decreased with beam intensity from 150 to 60 μm, reaching a constant value at very low beam intensities. The small focal spot of the microscope allowed the measurements to be extended to include n-type samples. Forthese samples L was found to change from 90 to 18 μm with decreasing beam intensity. The surface recombination velocity SGB was evaluated for both samples. For p-type samples it decreased from 25 000 to 6000 cm/s and for n-type samples from 21 000 to 3000 cm/s with decreasing beam intensity. The quasi-Fermi level separation was determined as a function of the excess minority-carrier-concentration density at the grain boundary and found to increase linearly with beam intensity.

Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3373-3378
Author(s):  
Marc Fouchier ◽  
Maria Fahed ◽  
Erwine Pargon ◽  
Névine Rochat ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Peak Shift ◽  
Surface Recombination Velocity ◽  
Degree Of Polarization ◽  
Strain Anisotropy ◽  
Luminescence Signal ◽  
Micron Size ◽  
Recombination Velocity ◽  
Cathodoluminescence Intensity

ABSTRACTThe effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.

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