Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films

1981 ◽  
Vol 5 ◽  
Author(s):  
H. Baumgart ◽  
H. J. Leamy ◽  
L. E. Trimble ◽  
C. J. Doherty ◽  
G. K. Celler
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Diffusion Length ◽  
Grain Boundary Diffusion ◽  
Silicon Thin Films ◽  
P Diffusion ◽  
Ion Laser ◽  
Si Films

ABSTRACTGrain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.

Determination of grain-boundary diffusion of Ag in nanocrystalline Cu by the Hwang–Balluffi method

2001 ◽  
Vol 89 (7) ◽  
pp. 3971-3975 ◽  
Author(s):  
Z. Erdélyi ◽  
Ch. Girardeaux ◽  
G. A. Langer ◽  
D. L. Beke ◽  
A. Rolland ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion

scholarly journals Synthesis of high-entropy alloy thin films via grain boundary diffusion–assisted solid-state alloying

2022 ◽  
Vol 207 ◽  
pp. 114302
Author(s):  
Seungjin Nam ◽  
Sang Jun Kim ◽  
Moon J. Kim ◽  
Manuel Quevedo-Lopez ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
High Entropy Alloy ◽  
High Entropy

Grain Boundary Diffusion in Co/Cu and Co/Cr Magnetic Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
John G. Holl-Pellerin ◽  
S.G.H. Anderson ◽  
P.S. Ho ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Photoelectron Spectroscopy ◽  
Boundary Diffusion ◽  
Magnetic Thin Films ◽  
Grain Boundary Diffusion ◽  
X Ray ◽  
Before And After

ABSTRACTX-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Cu and Cr through 1000 Å thick Co films in the temperature range of 325°C to 400°C. Grain boundary diffusivities were determined by modeling the accumulation of Cu or Cr on Co surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Cu through Co is characterized by a diffusion coefficient, D0gb, of 2 × 104 cm2/sec and an activation energy, Ea,gb, of 2.4 eV. Similarly, Cr grain boundary diffusion through Co thin films occurs with a diffusion coefficient, Do,gb, of 6 × 10-2cm2/sec and an activation energy, Ea,gb of 1.8 eV. The Co film microstructure has been investigated before and after annealing by x-ray diffraction and transmission electron Microscopy. Extensive grain growth and texturing of the film occurred during annealing for Co deposited on a Cu underlayer. In contrast, the microstructure of Co deposited on a Cr underlayer remained relatively unchanged upon annealing. Magnetometer Measurements have shown that increased in-plane coercivity Hc, reduced remanence squareness S, and reduced coercive squareness S* result from grain boundary diffusion of Cu and Cr into the Co films.

Analysis of grain‐boundary diffusion in thin films: Chromium in gold

1976 ◽  
Vol 47 (9) ◽  
pp. 3769-3775 ◽  
Author(s):  
P. H. Holloway ◽  
D. E. Amos ◽  
G. C. Nelson
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion
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