MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

2010 ◽  
Vol 207 (6) ◽  
pp. 1418-1420 ◽  
Author(s):  
Pawinee Klangtakai ◽  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth ◽  
Lattice Matched

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

1992 ◽  
Vol 124 (1-4) ◽  
pp. 199-206 ◽  
Author(s):  
F.E.G. Guimarães ◽  
B. Elsner ◽  
R. Westphalen ◽  
B. Spangenberg ◽  
H.J. Geelen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

2016 ◽  
Author(s):  
Tilman Schimpke ◽  
H.-J. Lugauer ◽  
A. Avramescu ◽  
T. Varghese ◽  
A. Koller ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Core Shell ◽  
Movpe Growth

MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy)

2007 ◽  
Vol 298 ◽  
pp. 103-106 ◽  
Author(s):  
F. Nakajima ◽  
W. Ono ◽  
S. Kuboya ◽  
R. Katayama ◽  
K. Onabe
Keyword(s):  
Optical Characterization ◽  
Movpe Growth

MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations

2006 ◽  
Vol 203 (7) ◽  
pp. 1641-1644 ◽  
Author(s):  
F. Nakajima ◽  
S. Sanorpim ◽  
W. Ono ◽  
R. Katayama ◽  
K. Onabe
Keyword(s):  
Optical Characterization ◽  
Movpe Growth ◽  
Nitrogen Concentrations

MOVPE Growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor

1994 ◽  
Vol 340 ◽  
Author(s):  
O. Briot ◽  
M. Di Blasio ◽  
T. Cloitre ◽  
N. Briot ◽  
P. Bigenwald ◽  
...  
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Optical Characterization ◽  
Variational Calculation ◽  
Light Hole ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Movpe Growth ◽  
Strained Layer Superlattices

ABSTRACTA novel zinc precursor adduct tetramethylmethylene diamine: dimethylzinc (TMMD:DMZn) has been used to grow ZnSe-ZnS strained layer superlattices by low pressure MOVPE at 300'C. The use of this new precursor leads to improved material purity and lower homogeneous gas phase premature reaction than in the case of dimethylzinc. Optical characterization has been made between liquid helium and room temperature. The 2K photoluminescence lines range between 2.85 eV and 3.15 eV. The 2K photoluminescence is characterized by a linewidth at half maximum ranging from 13-45 meV. Additional reflectivity and photoreflectance experiments have been carried out to measure light-hole excitons. A variational calculation of the Rydberg energies has been performed using a sophisticated trial function. The experimental data is in agreement with the theoretical value when a small conduction band offset is used.

Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+masked implantation

1991 ◽  
Vol 70 (3) ◽  
pp. 1444-1450 ◽  
Author(s):  
C. Vieu ◽  
M. Schneider ◽  
D. Mailly ◽  
R. Planel ◽  
H. Launois ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Optical Characterization

Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb

1998 ◽  
Vol 84 (1) ◽  
pp. 480-488 ◽  
Author(s):  
M. A. Marciniak ◽  
R. L. Hengehold ◽  
Y. K. Yeo ◽  
G. W. Turner
Keyword(s):  
Molecular Beam ◽  
Optical Characterization ◽  
Lattice Matched

Optical Characterization of InGaAs/InP Quantum Wires and Dots

1993 ◽  
Vol 324 ◽  
Author(s):  
S.Q. Gu ◽  
E. Reuter ◽  
Q. Xu ◽  
H. Chang ◽  
R. Panepucci ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Blue Shift ◽  
Optical Characterization ◽  
Excitation Intensity ◽  
Resolution Electron ◽  
Quantum Well Wires ◽  
Peak Emission

AbstractHigh resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm and quantum dots (QD) with diameters ranging from 600 to 100 nm. Low temperature photoluminescence (PL) spectra were investigated in these nanostructures as a function of excitation intensity, wire width, and dot diameter. The peak emission of the dry-etched 40 nm wires is shifted to higher energies by about 2 meV as compared to 100 nm wires. This “open wire” result is consistent with results reported for buried InGaAs/InP wires of the same width. The blue-shift of the PL peak reaches 10 meV in QDs as their diameters decrease to 100 nm. The magnitude of the observed blue shift in the QDs is larger than the blue-shift predicted on the basis of quantum confinement for the same size dots.

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