Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb

1998 ◽  
Vol 84 (1) ◽  
pp. 480-488 ◽  
Author(s):  
M. A. Marciniak ◽  
R. L. Hengehold ◽  
Y. K. Yeo ◽  
G. W. Turner
Keyword(s):  
Molecular Beam ◽  
Optical Characterization ◽  
Lattice Matched

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Structural and optical characterization of alternately strained GaAs/GaP/GaAs/InP superlattices grown by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 623-626 ◽  
Author(s):  
A. Mazuelas ◽  
J. Meléndez ◽  
P.S. Domínguez ◽  
M. Garriga ◽  
C. Ballesteros ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Optical Characterization

Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

2000 ◽  
Vol 209 (2-3) ◽  
pp. 445-449 ◽  
Author(s):  
Teruo Mozume ◽  
Nikolai Georgiev ◽  
Tetsuya Nishimura ◽  
Haruhiko Yoshida ◽  
Satoshi Nishikawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Type Ii ◽  
Lattice Matched

scholarly journals OPTICAL CHARACTERIZATION OF Nd3+ DOPED CaF2 LAYERS GROWN BY MOLECULAR BEAM EPITAXY

1991 ◽  
Vol 01 (C7) ◽  
pp. C7-297-C7-301
Author(s):  
L. E. BAUSA ◽  
R. LEGROS ◽  
A. MUNOZ-YAGUE
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization

Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 24 (3) ◽  
pp. 1591 ◽  
Author(s):  
A. Pulzara-Mora ◽  
M. Meléndez-Lira ◽  
C. Falcony-Guajardo ◽  
M. López-López ◽  
M. A. Vidal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization
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