Fabrication and optical characterization of quantum wires from semiconductor materials with varying In content

1989 ◽  
Vol 7 (6) ◽  
pp. 2030 ◽  
Author(s):  
B. E. Maile
Keyword(s):  
Quantum Wires ◽  
Optical Characterization ◽  
Semiconductor Materials

Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+masked implantation

1991 ◽  
Vol 70 (3) ◽  
pp. 1444-1450 ◽  
Author(s):  
C. Vieu ◽  
M. Schneider ◽  
D. Mailly ◽  
R. Planel ◽  
H. Launois ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Optical Characterization

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

1992 ◽  
Vol 124 (1-4) ◽  
pp. 199-206 ◽  
Author(s):  
F.E.G. Guimarães ◽  
B. Elsner ◽  
R. Westphalen ◽  
B. Spangenberg ◽  
H.J. Geelen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth

Optical Characterization of InGaAs/InP Quantum Wires and Dots

1993 ◽  
Vol 324 ◽  
Author(s):  
S.Q. Gu ◽  
E. Reuter ◽  
Q. Xu ◽  
H. Chang ◽  
R. Panepucci ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Blue Shift ◽  
Optical Characterization ◽  
Excitation Intensity ◽  
Resolution Electron ◽  
Quantum Well Wires ◽  
Peak Emission

AbstractHigh resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm and quantum dots (QD) with diameters ranging from 600 to 100 nm. Low temperature photoluminescence (PL) spectra were investigated in these nanostructures as a function of excitation intensity, wire width, and dot diameter. The peak emission of the dry-etched 40 nm wires is shifted to higher energies by about 2 meV as compared to 100 nm wires. This “open wire” result is consistent with results reported for buried InGaAs/InP wires of the same width. The blue-shift of the PL peak reaches 10 meV in QDs as their diameters decrease to 100 nm. The magnitude of the observed blue shift in the QDs is larger than the blue-shift predicted on the basis of quantum confinement for the same size dots.

MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

2010 ◽  
Vol 207 (6) ◽  
pp. 1418-1420 ◽  
Author(s):  
Pawinee Klangtakai ◽  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth ◽  
Lattice Matched

Optical characterization of quantum wires and quantum dots

1995 ◽  
Vol 152 (1) ◽  
pp. 269-280 ◽  
Author(s):  
L. Samuelson ◽  
A. Gustafsson ◽  
D. Hessman ◽  
J. Lindahl ◽  
L. Montelius ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wires ◽  
Optical Characterization

scholarly journals Optical characterization of semiconductor materials by using FTIR-PAS

2008 ◽  
Vol 134 ◽  
pp. 012019
Author(s):  
Fabiola Arévalo ◽  
Renato Saavedra ◽  
M Paulraj
Keyword(s):  
Optical Characterization ◽  
Semiconductor Materials
Sign in / Sign up

Export Citation Format

Share Document