Optical characterization of selectively intermixed GaAs/GaAlAs quantum wires by Ga+masked implantation

1991 ◽  
Vol 70 (3) ◽  
pp. 1444-1450 ◽  
Author(s):  
C. Vieu ◽  
M. Schneider ◽  
D. Mailly ◽  
R. Planel ◽  
H. Launois ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Optical Characterization

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

1992 ◽  
Vol 124 (1-4) ◽  
pp. 199-206 ◽  
Author(s):  
F.E.G. Guimarães ◽  
B. Elsner ◽  
R. Westphalen ◽  
B. Spangenberg ◽  
H.J. Geelen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth

Optical Characterization of InGaAs/InP Quantum Wires and Dots

1993 ◽  
Vol 324 ◽  
Author(s):  
S.Q. Gu ◽  
E. Reuter ◽  
Q. Xu ◽  
H. Chang ◽  
R. Panepucci ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Quantum Confinement ◽  
Quantum Wires ◽  
Blue Shift ◽  
Optical Characterization ◽  
Excitation Intensity ◽  
Resolution Electron ◽  
Quantum Well Wires ◽  
Peak Emission

AbstractHigh resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm and quantum dots (QD) with diameters ranging from 600 to 100 nm. Low temperature photoluminescence (PL) spectra were investigated in these nanostructures as a function of excitation intensity, wire width, and dot diameter. The peak emission of the dry-etched 40 nm wires is shifted to higher energies by about 2 meV as compared to 100 nm wires. This “open wire” result is consistent with results reported for buried InGaAs/InP wires of the same width. The blue-shift of the PL peak reaches 10 meV in QDs as their diameters decrease to 100 nm. The magnitude of the observed blue shift in the QDs is larger than the blue-shift predicted on the basis of quantum confinement for the same size dots.

MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

2010 ◽  
Vol 207 (6) ◽  
pp. 1418-1420 ◽  
Author(s):  
Pawinee Klangtakai ◽  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth ◽  
Lattice Matched

Optical characterization of quantum wires and quantum dots

1995 ◽  
Vol 152 (1) ◽  
pp. 269-280 ◽  
Author(s):  
L. Samuelson ◽  
A. Gustafsson ◽  
D. Hessman ◽  
J. Lindahl ◽  
L. Montelius ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Wires ◽  
Optical Characterization

Fabrication and Optical Characterization of InGaAs/InP Quantum Wires and Dots

1990 ◽  
Author(s):  
J. N. Patillon ◽  
C. Delalande ◽  
C. Jay ◽  
J. P. Andre ◽  
R. Gamonal ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Optical Characterization

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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