MOVPE growth and optical characterization of GaAsN films with higher nitrogen concentrations

2006 ◽  
Vol 203 (7) ◽  
pp. 1641-1644 ◽  
Author(s):  
F. Nakajima ◽  
S. Sanorpim ◽  
W. Ono ◽  
R. Katayama ◽  
K. Onabe
Keyword(s):  
Optical Characterization ◽  
Movpe Growth ◽  
Nitrogen Concentrations

Position-controlled MOVPE growth and electro-optical characterization of core-shell InGaN/GaN microrod LEDs

2016 ◽  
Author(s):  
Tilman Schimpke ◽  
H.-J. Lugauer ◽  
A. Avramescu ◽  
T. Varghese ◽  
A. Koller ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Core Shell ◽  
Movpe Growth

MOVPE growth and optical characterization of GaPN films using tertiarybutylphosphine (TBP) and 1,1-dimethylhydrazine (DMHy)

2007 ◽  
Vol 298 ◽  
pp. 103-106 ◽  
Author(s):  
F. Nakajima ◽  
W. Ono ◽  
S. Kuboya ◽  
R. Katayama ◽  
K. Onabe
Keyword(s):  
Optical Characterization ◽  
Movpe Growth

MOVPE Growth and optical characterization of high-quality ZnSe-ZnS superlattices using a novel zinc adduct precursor

1994 ◽  
Vol 340 ◽  
Author(s):  
O. Briot ◽  
M. Di Blasio ◽  
T. Cloitre ◽  
N. Briot ◽  
P. Bigenwald ◽  
...  
Keyword(s):  
Gas Phase ◽  
Room Temperature ◽  
Optical Characterization ◽  
Variational Calculation ◽  
Light Hole ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Movpe Growth ◽  
Strained Layer Superlattices

ABSTRACTA novel zinc precursor adduct tetramethylmethylene diamine: dimethylzinc (TMMD:DMZn) has been used to grow ZnSe-ZnS strained layer superlattices by low pressure MOVPE at 300'C. The use of this new precursor leads to improved material purity and lower homogeneous gas phase premature reaction than in the case of dimethylzinc. Optical characterization has been made between liquid helium and room temperature. The 2K photoluminescence lines range between 2.85 eV and 3.15 eV. The 2K photoluminescence is characterized by a linewidth at half maximum ranging from 13-45 meV. Additional reflectivity and photoreflectance experiments have been carried out to measure light-hole excitons. A variational calculation of the Rydberg energies has been performed using a sophisticated trial function. The experimental data is in agreement with the theoretical value when a small conduction band offset is used.

LP-MOVPE growth and optical characterization of GaInP/GaAs heterostructures: interfaces, quantum wells and quantum wires

1992 ◽  
Vol 124 (1-4) ◽  
pp. 199-206 ◽  
Author(s):  
F.E.G. Guimarães ◽  
B. Elsner ◽  
R. Westphalen ◽  
B. Spangenberg ◽  
H.J. Geelen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth

MOVPE growth and optical characterization of InGaAsN T-shaped quantum wires lattice-matched to GaAs

2010 ◽  
Vol 207 (6) ◽  
pp. 1418-1420 ◽  
Author(s):  
Pawinee Klangtakai ◽  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wires ◽  
Optical Characterization ◽  
Movpe Growth ◽  
Lattice Matched

MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices

1994 ◽  
Vol 16 (1) ◽  
pp. 71-76 ◽  
Author(s):  
L. Aigouy ◽  
N. Briot ◽  
D. Bouchara ◽  
T. Cloitre ◽  
M. di Blasio ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Strained Layer ◽  
Movpe Growth ◽  
Strained Layer Superlattices

Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Optical Characterization

Optical Characterization of Monodispersed Aaqueous Cu2+-Doped CdS Nanoparticles Prepared Under Microwave Irradiation Conditions

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Optical Characterization ◽  
Cds Nanoparticles
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