Porous silicon antireflection coating by electrochemical and chemical etching for silicon solar cell manufacturing

2003 ◽  
Vol 197 (2) ◽  
pp. 512-517 ◽  
Author(s):  
M. Lipiński ◽  
S. Bastide ◽  
P. Panek ◽  
C. Lévy-Clément
2007 ◽  
Vol 4 (4) ◽  
pp. 1566-1569 ◽  
Author(s):  
M. Lipiński ◽  
A. Kaminski ◽  
J.-F. Lelièvre ◽  
M. Lemiti ◽  
E. Fourmond ◽  
...  

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Hsi-Chien Liu ◽  
Gou-Jen Wang

The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.


2011 ◽  
Vol 2011 ◽  
pp. 1-4 ◽  
Author(s):  
Hyukyong Kwon ◽  
Jaedoo Lee ◽  
Minjeong Kim ◽  
Soohong Lee

Solar cell is device that directly converts the energy of solar radiation to electrical energy. So it is important for solar cell to reduce the surface reflection of light in order to improve the efficiency of the device. Texturing and antireflection coating have been used to reduce the reflection of light. Texturing technology has reduced the 10% of incident light. However, there are a few disadvantages of random pyramid texturing that the results are not always reproducible in an industrial environment. And AR coating (MgF2, ZnS) is difficult to apply the standard industrial process because high vacuum is needed and the expense is very heavy. This paper investigates the formation of a thin film of porous silicon on the surface of crystalline silicon substrate without other AR coating layers. The formation of the porous silicon layer was measured with SEM (scanning electron microscopy). The formation of porous silicon layers on the textured silicon wafer resulted in lower than 5% of reflectance in the wavelength region from 400 to 1000 nm.


2003 ◽  
Vol 77 (1) ◽  
pp. 51-64 ◽  
Author(s):  
D. Majumdar ◽  
S. Chatterjee ◽  
M. Dhar ◽  
S.K. Dutta ◽  
H. Saha

2016 ◽  
Vol 49 (1) ◽  
Author(s):  
Amira Bougoffa ◽  
Abdessalem Trabelsi ◽  
Abdelaziz Zouari ◽  
Essebti Dhahri

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