Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry

2003 ◽  
Vol 195 (1) ◽  
pp. 277-281 ◽  
Author(s):  
E. R. Shaaban ◽  
T. Lohner ◽  
P. Petrik ◽  
N. Q. Khánh ◽  
M. Fried ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Complex Dielectric Function ◽  
Amorphous Sic ◽  
Ion Implanted

The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

1982 ◽  
Vol 14 ◽  
Author(s):  
Jinshen Luo ◽  
P.J. Mc Marr ◽  
K. Vedam
Keyword(s):  
Dielectric Function ◽  
Spectral Range ◽  
Spectroscopic Ellipsometry ◽  
Ion Implanted

ABSTRACTWe have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].

Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

2008 ◽  
Vol 5 (5) ◽  
pp. 1374-1377 ◽  
Author(s):  
T. Lohner ◽  
Z. Zolnai ◽  
P. Petrik ◽  
G. Battistig ◽  
J. Garcia López ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Complex Dielectric Function

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

2003 ◽  
Vol 94 (1) ◽  
pp. 307-312 ◽  
Author(s):  
S. Shokhovets ◽  
R. Goldhahn ◽  
G. Gobsch ◽  
S. Piekh ◽  
R. Lantier ◽  
...  
Keyword(s):  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Anisotropic Dielectric
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