The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry
ABSTRACTWe have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].
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2003 ◽
Vol 206
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pp. 668-672
2014 ◽
Vol 98
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pp. 7-13
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2020 ◽
Vol 38
(1)
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pp. 014001