The Study of Damage Profile of Ion Implanted Layer on Si by Spectroscopic Ellipsometry

1982 ◽  
Vol 14 ◽  
Author(s):  
Jinshen Luo ◽  
P.J. Mc Marr ◽  
K. Vedam

ABSTRACTWe have determined the dielectric function of silicon samples which were implanted with 100-150 KeV P, As, Si ions to doses of 2·1014-1·1016cm−2, by a rotating analyser Automated ellipsometer in the spectral range 1.77− 4.59 eV. These data have been analyzed using a simplified three layer model.The results are compared with an earlier ellipsometric investigation [2].

2003 ◽  
Vol 195 (1) ◽  
pp. 277-281 ◽  
Author(s):  
E. R. Shaaban ◽  
T. Lohner ◽  
P. Petrik ◽  
N. Q. Khánh ◽  
M. Fried ◽  
...  

1999 ◽  
Vol 59 (3) ◽  
pp. 1845-1849 ◽  
Author(s):  
T. Wethkamp ◽  
K. Wilmers ◽  
C. Cobet ◽  
N. Esser ◽  
W. Richter ◽  
...  

2000 ◽  
Vol 639 ◽  
Author(s):  
A. Kasic ◽  
M. Schubert ◽  
B. Rheinländer ◽  
J. Off ◽  
F. Scholz ◽  
...  

ABSTRACTSpectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm−1 … 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1−xInxN films for 0.11 ≤ × ≤ 0.21. The AlInN E1(TO) phonon shows a onemode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1−xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1−xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For highquality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.


1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


2014 ◽  
Vol 98 ◽  
pp. 7-13 ◽  
Author(s):  
M. Šiljegović ◽  
Z.M. Kačarević-Popović ◽  
M. Stchakovsky ◽  
A.N. Radosavljević ◽  
S. Korica ◽  
...  

1983 ◽  
Vol 6 ◽  
pp. 309-316 ◽  
Author(s):  
H. Arwin ◽  
D.E. Aspnes ◽  
R. Bjorklund ◽  
I. Lundström

2019 ◽  
Vol 115 (21) ◽  
pp. 212103 ◽  
Author(s):  
O. Herrfurth ◽  
T. Pflug ◽  
M. Olbrich ◽  
M. Grundmann ◽  
A. Horn ◽  
...  

2009 ◽  
Vol 20 (30) ◽  
pp. 305702 ◽  
Author(s):  
F Ahmed ◽  
A En Naciri ◽  
J J Grob ◽  
M Stchakovsky ◽  
L Johann

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