High-quality surface passivation of silicon solar cells in an industrial-type inline plasma silicon nitride deposition system

2004 ◽  
Vol 12 (1) ◽  
pp. 21-31 ◽  
Author(s):  
Jens D. Moschner ◽  
Jürgen Henze ◽  
Jan Schmidt ◽  
Rudolf Hezel
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
High Quality ◽  
Quality Surface ◽  
High Quality Surface

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

2014 ◽  
Vol 104 (5) ◽  
pp. 053503 ◽  
Author(s):  
Vivek Sharma ◽  
Clarence Tracy ◽  
Dieter Schroder ◽  
Stanislau Herasimenka ◽  
William Dauksher ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Silicon Nitride Films ◽  
Charge States

Surface passivation by silicon nitride in Laser Grooved Buried Contact (LGBC) silicon solar cells

2009 ◽  
Vol 45 (4-5) ◽  
pp. 234-239 ◽  
Author(s):  
G. Claudio ◽  
K. Bass ◽  
K. Heasman ◽  
A. Cole ◽  
S. Roberts ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Surface Passivation ◽  
Silicon Solar Cells

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

2020 ◽  
Vol 89 (1) ◽  
pp. 10101
Author(s):  
Chisato Niikura ◽  
Yuta Shiratori ◽  
Shinsuke Miyajima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
High Quality ◽  
Gas Heating ◽  
The Impact ◽  
Quality Surface ◽  
High Quality Surface

We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction solar cells. The sample with the a-Si:H layers corresponding to the highest proportion of SiHx(x=2,3) content in SiHx(x=1–3) content exhibited the minimum surface recombination velocity (S) after annealing. This suggests that using SiHx(x=2,3)-rich a-Si:H grown at low-temperature as a passivation layer is advantageous to inhibit an epitaxial growth at the a-Si:H/crystalline Si interface, and that a structural relaxation of the a-Si:H takes place during post-deposition annealing, drastically improving passivation quality. Also, the importance to use a low Tsub and to optimize gas-heating and the triode technique, for obtaining simultaneously higher film quality and abrupt interface, is suggested. Low S obtained for our unoptimized samples implies the potency of this deposition technique. Nevertheless, further studies are needed to elucidate the impact of gas-heating and the triode technique on Si surface passivation. Temperature-dependent effective carrier lifetime for our samples might suggest relatively large electron affinity for an a-Si:H, which might be one possible reason for high-quality surface passivation.

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