PECVD Silicon Nitride Surface Passivation for High-Efficiency N-Type Silicon Solar Cells

2006 ◽  
Author(s):  
Florence Chen ◽  
Tsu-tsung Li ◽  
Jeffrey Cotter
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Type Silicon

scholarly journals Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Type Silicon

Advances in Surface Passivation Schemes for High Efficiency c-Silicon Solar Cells

2016 ◽  
Vol 16 (10) ◽  
pp. 10659-10664 ◽  
Author(s):  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Seunghwan Lee ◽  
Youn-Jung Lee ◽  
Junsin Yi
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells

High-Efficiency n-Type Silicon Solar Cells: Advances in PassDop Technology and NiCu Plating on Boron Emitter

2016 ◽  
Vol 6 (2) ◽  
pp. 419-425 ◽  
Author(s):  
Bernd Steinhauser ◽  
Mathias Kamp ◽  
Andreas A. Brand ◽  
Ulrich Jager ◽  
Jonas Bartsch ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Type Silicon

Surface Passivation Materials for High-Efficiency Silicon Solar Cells

2020 ◽  
pp. 413-441
Author(s):  
Shui-Yang Lien ◽  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Pao-Hsun Huang
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells

scholarly journals Anodic oxidations: Excellent process durability and surface passivation for high efficiency silicon solar cells

2019 ◽  
Vol 203 ◽  
pp. 110155
Author(s):  
N.E. Grant ◽  
T.C. Kho ◽  
K.C. Fong ◽  
E. Franklin ◽  
K.R. McIntosh ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Surface Passivation ◽  
Silicon Solar Cells

Tunnel oxide passivating electron contacts for high‐efficiency n‐type silicon solar cells with amorphous silicon passivating hole contacts

2019 ◽  
Vol 27 (12) ◽  
pp. 1104-1114 ◽  
Author(s):  
HyunJung Park ◽  
Youngseok Lee ◽  
Se Jin Park ◽  
Soohyun Bae ◽  
Sangho Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Type Silicon

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

2014 ◽  
Vol 104 (5) ◽  
pp. 053503 ◽  
Author(s):  
Vivek Sharma ◽  
Clarence Tracy ◽  
Dieter Schroder ◽  
Stanislau Herasimenka ◽  
William Dauksher ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Silicon Nitride Films ◽  
Charge States

Surface passivation by silicon nitride in Laser Grooved Buried Contact (LGBC) silicon solar cells

2009 ◽  
Vol 45 (4-5) ◽  
pp. 234-239 ◽  
Author(s):  
G. Claudio ◽  
K. Bass ◽  
K. Heasman ◽  
A. Cole ◽  
S. Roberts ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Surface Passivation ◽  
Silicon Solar Cells

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

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