scholarly journals High-Quality Surface Passivation Obtained by High-Rate Deposited Silicon Nitride, Silicon Dioxide and Amorphous Silicon using the Versatile Expanding Thermal Plasma Technique

2006 ◽  
Author(s):  
B. Hoex ◽  
F.J.J. Peeters ◽  
A.J.M. van Erven ◽  
M.D. Bijker ◽  
W.M.M. Kessels ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Thermal Plasma ◽  
Surface Passivation ◽  
High Rate ◽  
High Quality ◽  
Plasma Technique ◽  
Quality Surface ◽  
High Quality Surface

Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

2020 ◽  
Vol 89 (1) ◽  
pp. 10101
Author(s):  
Chisato Niikura ◽  
Yuta Shiratori ◽  
Shinsuke Miyajima
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Surface Recombination Velocity ◽  
High Quality ◽  
Gas Heating ◽  
The Impact ◽  
Quality Surface ◽  
High Quality Surface

We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction solar cells. The sample with the a-Si:H layers corresponding to the highest proportion of SiHx(x=2,3) content in SiHx(x=1–3) content exhibited the minimum surface recombination velocity (S) after annealing. This suggests that using SiHx(x=2,3)-rich a-Si:H grown at low-temperature as a passivation layer is advantageous to inhibit an epitaxial growth at the a-Si:H/crystalline Si interface, and that a structural relaxation of the a-Si:H takes place during post-deposition annealing, drastically improving passivation quality. Also, the importance to use a low Tsub and to optimize gas-heating and the triode technique, for obtaining simultaneously higher film quality and abrupt interface, is suggested. Low S obtained for our unoptimized samples implies the potency of this deposition technique. Nevertheless, further studies are needed to elucidate the impact of gas-heating and the triode technique on Si surface passivation. Temperature-dependent effective carrier lifetime for our samples might suggest relatively large electron affinity for an a-Si:H, which might be one possible reason for high-quality surface passivation.

Industrial high-rate (∼5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions

2005 ◽  
Vol 13 (8) ◽  
pp. 705-712 ◽  
Author(s):  
B. Hoex ◽  
A. J. M. van Erven ◽  
R. C. M. Bosch ◽  
W. T. M. Stals ◽  
M. D. Bijker ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
High Rate ◽  
High Quality

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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