scholarly journals Novel Conjugated Side Chain Fluorinated Polymers Based on Fluorene for Light‐Emitting and Ternary Flash Memory Devices

ChemistryOpen ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1267-1275 ◽  
Author(s):  
Qian Zhang ◽  
Dongge Ma ◽  
Dianzhong Wen ◽  
Cheng Wang ◽  
Xuduo Bai ◽  
...  
Keyword(s):  
Flash Memory ◽  
Side Chain ◽  
Memory Devices ◽  
Fluorinated Polymers ◽  
Light Emitting

Physics of Oxides for Future Devices

MRS Bulletin ◽  
2010 ◽  
Vol 35 (3) ◽  
pp. 227-230 ◽  
Author(s):  
James F. Scott
Keyword(s):  
Flash Memory ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
New Directions ◽  
Materials Research ◽  
Rare Earth Systems

AbstractFerroelectric oxides underwent a renaissance in the 1980s and 1990s, driven by the success in commercializing thin-film ferroelectric random-access memory devices (FRAMs) for applications such as the SONY PlayStation 2 memory board. Materials scientists gravitated into this new field from magnetic oxides and from high-Tcsuperconductivity. But as the FRAM prospects wane and neither dynamic random-access memory devices nor FLASH memory has been replaced, we now require new directions for materials research on oxides. In this article, I outline briefly four new directions for ferroelectric oxide research: something old—ferroelectrically induced ferromagnetism and multiferroic switching; something new—THz emission from oxide ferroelectrics; something borrowed—Heisenberg-like switching of domains in nanoferroelectrics; and something blue—ZnO light-emitting devices. Magnetoelectricity—the linear coupling of polarization and magnetization—was theoretically predicted by Igor Dzyaloshinskii in 1957 and measured experimentally by Astrov two years later. It did not produce commercial devices. Although a flurry of new work occurred in the 1970s, emphasizing boracites—mostly by Hans Schmid in Geneva, no materials were found that exhibited large effects at room temperature. In the past decade, the search has been renewed, emphasizing rare earth systems such as Tb manganites.

Conjugated polymers with cationic iridium(iii) complexes in the side-chain for flash memory devices utilizing switchable through-space charge transfer

2012 ◽  
Vol 22 (43) ◽  
pp. 22964 ◽  
Author(s):  
Shu-Juan Liu ◽  
Wen-Peng Lin ◽  
Ming-Dong Yi ◽  
Wen-Juan Xu ◽  
Chao Tang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Conjugated Polymers ◽  
Space Charge ◽  
Flash Memory ◽  
Side Chain ◽  
Memory Devices

Adaptive Interference Mitigation for Multilevel Flash Memory Devices

2011 ◽  
Vol E94-A (11) ◽  
pp. 2453-2457
Author(s):  
Myeongwoon JEON ◽  
Kyungchul KIM ◽  
Sungkyu CHUNG ◽  
Seungjae CHUNG ◽  
Beomju SHIN ◽  
...  
Keyword(s):  
Flash Memory ◽  
Interference Mitigation ◽  
Memory Devices

Characterization of tunnel-oxide degradation due to plasma field oxide recess in flash memory devices

2012 ◽  
Vol 520 (15) ◽  
pp. 5007-5010 ◽  
Author(s):  
Jeungyun Lee ◽  
Dong-Kwon Kim ◽  
Gyung-Jin Min ◽  
Ilsub Chung
Keyword(s):  
Flash Memory ◽  
Memory Devices ◽  
Oxide Degradation ◽  
Field Oxide

Garbage Collection Algorithms for NAND Flash Memory Devices -- An Overview

2013 ◽  
Author(s):  
Raja Subramani ◽  
Haritima Swapnil ◽  
Niharika Thakur ◽  
Bharath Radhakrishnan ◽  
Krishnamurthy Puttaiah
Keyword(s):  
Flash Memory ◽  
Garbage Collection ◽  
Memory Devices ◽  
Nand Flash ◽  
Nand Flash Memory

Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3369-3373 ◽  
Author(s):  
Ping-Wei Wang ◽  
Tzu-Kun Ku ◽  
Huan-Ping Su ◽  
Gary Hong ◽  
Huang-Chung Cheng
Keyword(s):  
Flash Memory ◽  
Silicon Films ◽  
Emission Characteristics ◽  
Memory Devices
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