Side-chain and linkage-mediated effects of anthraquinone moieties on ambipolar poly(triphenylamine)-based volatile polymeric memory devices

2014 ◽  
Vol 50 (38) ◽  
pp. 4915 ◽  
Author(s):  
Jia-Hao Wu ◽  
Hung-Ju Yen ◽  
Yi-Cheng Hu ◽  
Guey-Sheng Liou
Keyword(s):  
Side Chain ◽  
Memory Devices ◽  
Mediated Effects

scholarly journals Novel Conjugated Side Chain Fluorinated Polymers Based on Fluorene for Light‐Emitting and Ternary Flash Memory Devices

ChemistryOpen ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1267-1275 ◽  
Author(s):  
Qian Zhang ◽  
Dongge Ma ◽  
Dianzhong Wen ◽  
Cheng Wang ◽  
Xuduo Bai ◽  
...  
Keyword(s):  
Flash Memory ◽  
Side Chain ◽  
Memory Devices ◽  
Fluorinated Polymers ◽  
Light Emitting

Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups

2011 ◽  
Vol 21 (39) ◽  
pp. 15643 ◽  
Author(s):  
Yue-Qin Li ◽  
Run-Chen Fang ◽  
An-Min Zheng ◽  
Yue-Ying Chu ◽  
Xian Tao ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Side Chain ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Pyrene-Incorporated Side Chain in π-Conjugated Polymers for Non-Volatile Transistor-Type Memory Devices with Improved Stretchability

2021 ◽  
Vol 3 (4) ◽  
pp. 2109-2119
Author(s):  
Yan-Cheng Lin ◽  
Chih-Chien Hung ◽  
Chun-Kai Chen ◽  
Yun-Chi Chiang ◽  
Li-Che Hsu ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Side Chain ◽  
Memory Devices

Design and synthesis of conjugated polymers containing Pt(ii) complexes in the side-chain and their application in polymer memory devices

2012 ◽  
Vol 22 (19) ◽  
pp. 9576 ◽  
Author(s):  
Peng Wang ◽  
Shu-Juan Liu ◽  
Zhen-Hua Lin ◽  
Xiao-Chen Dong ◽  
Qiang Zhao ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Side Chain ◽  
Memory Devices ◽  
Design And Synthesis ◽  
Polymer Memory

WORM memory devices based on conformation change of a PVK derivative with a rigid spacer in side chain

2010 ◽  
Vol 123 (2-3) ◽  
pp. 685-689 ◽  
Author(s):  
Yuanhua Liu ◽  
Najun Li ◽  
Xuewei Xia ◽  
Qingfeng Xu ◽  
Jianfeng Ge ◽  
...  
Keyword(s):  
Side Chain ◽  
Memory Devices ◽  
Conformation Change ◽  
Rigid Spacer

Conjugated polymers with cationic iridium(iii) complexes in the side-chain for flash memory devices utilizing switchable through-space charge transfer

2012 ◽  
Vol 22 (43) ◽  
pp. 22964 ◽  
Author(s):  
Shu-Juan Liu ◽  
Wen-Peng Lin ◽  
Ming-Dong Yi ◽  
Wen-Juan Xu ◽  
Chao Tang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Conjugated Polymers ◽  
Space Charge ◽  
Flash Memory ◽  
Side Chain ◽  
Memory Devices

An all-in-one memory cell based on a homopolymer with a pyrene side chain and its volatile and nonvolatile resistive switch behaviors

2018 ◽  
Vol 9 (9) ◽  
pp. 1139-1146 ◽  
Author(s):  
Hongliang Wang ◽  
Feng Zhou ◽  
Linxin Wu ◽  
Xiong Xiao ◽  
Pei-Yang Gu ◽  
...  
Keyword(s):  
Memory Cell ◽  
Side Chain ◽  
Memory Devices ◽  
Resistive Switch

Memory devices based on PMPPE exhibit a rewritable ternary memory behaviour (0, 1, 2, three conductivity states).

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Electroluminescent properties of side-chain naphthalimide-derivated polymers

1998 ◽  
Vol 95 (6) ◽  
pp. 1351-1354 ◽  
Author(s):  
C.-M. Bouché ◽  
P. Le Barny ◽  
H. Facoetti ◽  
F. Soyer ◽  
P. Robin
Keyword(s):  
Side Chain
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