A
            SPICE
            model of
            p
            ‐channel silicon tunneling field‐effect transistors for logic applications

Sola Woo; Juhee Jeon; Sangsig Kim

doi:10.1002/jnm.2793

A SPICE model of p ‐channel silicon tunneling field‐effect transistors for logic applications

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2793 ◽

2020 ◽

Vol 34 (1) ◽

Author(s):

Sola Woo ◽

Juhee Jeon ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Spice Model ◽

Tunneling Field Effect Transistors

Download Full-text

A SPICE model of silicon tunneling field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2018.01.028 ◽

2018 ◽

Vol 191 ◽

pp. 66-71 ◽

Cited By ~ 1

Author(s):

Sola Woo ◽

Minsuk Kim ◽

Sangsig Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Spice Model ◽

Tunneling Field Effect Transistors

Download Full-text

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽

10.3390/en13010187 ◽

2020 ◽

Vol 13 (1) ◽

pp. 187 ◽

Cited By ~ 1

Author(s):

Kamil Bargieł ◽

Damian Bisewski ◽

Janusz Zarębski

Keyword(s):

Silicon Carbide ◽

Integrated Circuit ◽

Field Effect ◽

Field Effect Transistors ◽

Dynamic Properties ◽

Modified Model ◽

Spice Model ◽

Capacitance Voltage ◽

Effect Transistor ◽

Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Download Full-text

Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

Download Full-text

Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

Download Full-text

Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

Download Full-text

Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

Download Full-text

Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea?

ECS Meeting Abstracts ◽

10.1149/ma2010-02/30/1892 ◽

2010 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

Download Full-text

Design and Modeling of Line-Tunneling Field-Effect Transistors Using Low-Bandgap Semiconductors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2316217 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1907-1913 ◽

Cited By ~ 14

Author(s):

Chun-Hsing Shih ◽

Nguyen Dang Chien

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Bandgap ◽

Tunneling Field Effect Transistors ◽

Bandgap Semiconductors

Download Full-text

Tunneling Field Effect Transistors for Enhancing Energy Efficiency and Hardware Security of IoT Platforms: Challenges and Opportunities

2018 IEEE International Symposium on Circuits and Systems (ISCAS) ◽

10.1109/iscas.2018.8350939 ◽

2018 ◽

Cited By ~ 4

Author(s):

Japa Aditya ◽

T. Nagateja ◽

Santosh Kumar Vishvakarma ◽

Palagani Yellappa ◽

Jun Rim Choi ◽

...

Keyword(s):

Energy Efficiency ◽

Field Effect ◽

Field Effect Transistors ◽

Hardware Security ◽

Tunneling Field Effect Transistors ◽

Challenges And Opportunities ◽

Iot Platforms ◽

Security Of Iot

Download Full-text

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Cited By ~ 10

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

Download Full-text