Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma andtert-Butylimido-tris(diethylamido)-tantalum (TBTDET), and its Effect on Material Properties

2008 ◽  
Vol 14 (11-12) ◽  
pp. 334-338 ◽  
Author(s):  
Moon-Kyun Song ◽  
Shi-Woo Rhee
Keyword(s):  
Atomic Layer Deposition ◽  
Material Properties ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Tantalum Carbide ◽  
Layer Deposition

scholarly journals Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies

2018 ◽  
Vol 10 (15) ◽  
pp. 13158-13180 ◽  
Author(s):  
Tahsin Faraz ◽  
Harm C. M. Knoops ◽  
Marcel A. Verheijen ◽  
Cristian A. A. van Helvoirt ◽  
Saurabh Karwal ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Material Properties ◽  
Atomic Layer ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1058
Author(s):  
Katherine Hansen ◽  
Melissa Cardona ◽  
Amartya Dutta ◽  
Chen Yang
Keyword(s):  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Blue Shift ◽  
Transition Metal Nitrides ◽  
Temperature Plasma ◽  
Promising Alternative ◽  
Layer Deposition ◽  
Post Deposition

Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post-deposition was found to tune the plasmonic properties of the films, resulting in a blue-shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.

scholarly journals Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties

2010 ◽  
Vol 107 (6) ◽  
pp. 064314 ◽  
Author(s):  
D. Hiller ◽  
R. Zierold ◽  
J. Bachmann ◽  
M. Alexe ◽  
Y. Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Silicon Dioxide ◽  
Material Properties ◽  
Atomic Layer ◽  
Layer Deposition

Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

2018 ◽  
Vol 347 ◽  
pp. 181-190 ◽  
Author(s):  
L. Tian ◽  
S. Ponton ◽  
M. Benz ◽  
A. Crisci ◽  
R. Reboud ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Aluminum Nitride ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document