scholarly journals Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH3

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1058
Author(s):  
Katherine Hansen ◽  
Melissa Cardona ◽  
Amartya Dutta ◽  
Chen Yang
Keyword(s):  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Blue Shift ◽  
Transition Metal Nitrides ◽  
Temperature Plasma ◽  
Promising Alternative ◽  
Layer Deposition ◽  
Post Deposition

Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma-enhanced atomic layer deposition (PE-ALD) of non-stoichiometric TiN0.71 on lattice-matched and -mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post-deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post-deposition was found to tune the plasmonic properties of the films, resulting in a blue-shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.

Low Temperature Epitaxial Oxide Ultrathin Films and Nanostructures by Atomic Layer Deposition

2012 ◽  
Vol 24 (19) ◽  
pp. 3732-3737 ◽  
Author(s):  
Mariona Coll ◽  
Jaume Gazquez ◽  
Anna Palau ◽  
Maria Varela ◽  
Xavier Obradors ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Ultrathin Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Epitaxial Oxide

Trap Reduction through O 3 Post‐Deposition Treatment of Y 2 O 3 Thin Films Grown by Atomic Layer Deposition on Ge Substrates

2021 ◽  
Vol 7 (2) ◽  
pp. 2000819 ◽  
Author(s):  
Dong Gun Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
Haengha Seo ◽  
Tae Kyun Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Post Deposition

A Selective BP/Si Contact Formed by Low-Temperature Plasma-Enhanced Atomic Layer Deposition

2021 ◽  
Vol 47 (1) ◽  
pp. 96-98
Author(s):  
A. S. Gudovskikh ◽  
D. A. Kudryashov ◽  
A. I. Baranov ◽  
A. V. Uvarov ◽  
I. A. Morozov
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition

scholarly journals Tuning of Emission Wavelength of CaS:Eu by Addition of Oxygen Using Atomic Layer Deposition

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 5966
Author(s):  
José Rosa ◽  
Jouko Lahtinen ◽  
Jaakko Julin ◽  
Zhipei Sun ◽  
Harri Lipsanen
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Luminescent Properties ◽  
Blue Shift ◽  
Inorganic Materials ◽  
Emission Wavelength ◽  
Layer Deposition ◽  
Fine Control ◽  
Novel Material ◽  
Luminescent Centers

Atomic layer deposition (ALD) technology has unlocked new ways of manipulating the growth of inorganic materials. The fine control at the atomic level allowed by ALD technology creates the perfect conditions for the inclusion of new cationic or anionic elements of the already-known materials. Consequently, novel material characteristics may arise with new functions for applications. This is especially relevant for inorganic luminescent materials where slight changes in the vicinity of the luminescent centers may originate new emission properties. Here, we studied the luminescent properties of CaS:Eu by introducing europium with oxygen ions by ALD, resulting in a novel CaS:EuO thin film. We study structural and photoluminescent properties of two different ALD deposited Eu doped CaS thin films: Eu(thd)3 which reacted with H2S forming CaS:Eu phosphor, or with O3 originating a CaS:EuO phosphor. It was found that the emission wavelength of CaS:EuO was 625.8 nm whereas CaS:Eu was 647 nm. Thus, the inclusion of O2− ions by ALD in a CaS:Eu phosphor results in the blue-shift of 21.2 nm. Our results show that ALD can be an effective way to introduce additional elements (e.g., anionic elements) to engineer the physical properties (e.g., inorganic phosphor emissions) for photonics and optoelectronics.

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition

2018 ◽  
Vol 6 (24) ◽  
pp. 6471-6482 ◽  
Author(s):  
Ali Haider ◽  
Petro Deminskyi ◽  
Mehmet Yilmaz ◽  
Kholoud Elmabruk ◽  
Ibrahim Yilmaz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Anodized Aluminum ◽  
Temperature Plasma ◽  
Anodized Aluminum Oxide ◽  
Si Substrates ◽  
Cylinder Arrays ◽  
Layer Deposition

In this work, we demonstrate vertical GaN, AlN, and InN hollow nano-cylindrical arrays (HNCs) grown on Si substrates using anodized aluminum oxide (AAO) membrane templated low-temperature plasma-assisted atomic layer deposition (PA-ALD).

scholarly journals Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Zhen Zhu ◽  
Perttu Sippola ◽  
Oili M. E. Ylivaara ◽  
Chiara Modanese ◽  
Marisa Di Sabatino ◽  
...  
Keyword(s):  
Carbon Dioxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Layer Deposition
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