Low temperature polycrystalline silicon film formation by metal induced crystallization with nickel salt derived by ultrasonic spray pyrolysis

2011 ◽  
pp. n/a-n/a
Author(s):  
Mingfei Yang ◽  
Xiao Wei Sun ◽  
Hong Yu Yu ◽  
Junshuai Li ◽  
Junhui Hu
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Film Formation ◽  
Silicon Film ◽  
Ultrasonic Spray Pyrolysis ◽  
Nickel Salt ◽  
Metal Induced Crystallization ◽  
Ultrasonic Spray ◽  
Induced Crystallization ◽  
Polycrystalline Silicon Film

Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2

2006 ◽  
Vol 513 (1-2) ◽  
pp. 380-384 ◽  
Author(s):  
Rui Huang ◽  
Xuanying Lin ◽  
Wenyong Huang ◽  
Ruohe Yao ◽  
Yunpeng Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Polycrystalline Silicon Film

Modifying Polycrystalline Films Through Ion Channelling

1983 ◽  
Vol 27 ◽  
Author(s):  
R. B. Iverson ◽  
R. Reif
Keyword(s):  
Grain Size ◽  
Low Temperature ◽  
Ion Implantation ◽  
Total Dose ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Transmission Electron ◽  
Amorphous Substrate ◽  
Polycrystalline Silicon Film ◽  
Low Temperature Process

ABSTRACTA novel low-temperature process to enhance the grain size of a polycrystalline film on an amorphous substrate has been previously reported. In this process, ion implantation is used to selectively anorphize the film, and undamaged grains act as seed crystals in a subsequent low-temperature anneal. In this work, a 120 nm polycrystalline silicon film was implanted from three angles with phosphorous at 150°K. The total dose was l.0×l015/cm2 . Transmission electron micrographs after a partial anneal (700°C for 30 minutes) indicate that some crystallites survived implantation due to ion channelling in the (111) plane. After a 60 minute anneal at 700°C, 7 μm grains were observed.

Fabrication and Analysis of Nano-Aluminum-Induced Low-Temperature Polycrystalline Silicon Film

2008 ◽  
Vol 594 ◽  
pp. 96-103
Author(s):  
Hsiao Yeh Chu ◽  
Ming Hang Weng ◽  
Ru Yuan Yang ◽  
Chien Wei Huang ◽  
Chien Cheng Liu
Keyword(s):  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Uniform Size ◽  
Average Grain Size ◽  
Current Characteristics ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization ◽  
Polycrystalline Silicon Film

In this paper, we successfully fabricate polycrystalline silicon films with very large and uniform-size grains by the method of nanometer thick aluminum induced crystallization (nano-AIC) on the a-Si:H film deposited by plasma enhanced chemical vapor deposition (PECVD). The effect of annealing ramp-up time is discussed. Four different annealing ramp-up time, 1,5,10,20 hours, are tested. The results show the maximum average grain size obtained in this paper is about 60 μm under the condition of 20-hour annealing ramp-up time. The nano-AIC specimens show a much better leakage current characteristics than the AIC specimens since the Al layer in AIC process is much thicker and was not removed completely from the polycrystalline silicon film during Al wet selective etching process.

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