scholarly journals Charting the Exciton–Polariton Landscape of WSe 2 Thin Flakes by Cathodoluminescence Spectroscopy

2021 ◽  
pp. 2100124
Author(s):  
Masoud Taleb ◽  
Fatemeh Davoodi ◽  
Florian K. Diekmann ◽  
Kai Rossnagel ◽  
Nahid Talebi
Keyword(s):  
Cathodoluminescence Spectroscopy

scholarly journals Single Particle Cathodoluminescence Spectroscopy with Sub-20 nm, Electron-Stable Phosphors

ACS Photonics ◽  
2021 ◽  
Author(s):  
Dayne F. Swearer ◽  
Stefan Fischer ◽  
Daniel K. Angell ◽  
Chris Siefe ◽  
A. Paul Alivisatos ◽  
...  
Keyword(s):  
Single Particle ◽  
Cathodoluminescence Spectroscopy ◽  
20 Nm

Nanometer-Scale Stress Field Evaluation of Cu∕ILD Structure by Cathodoluminescence Spectroscopy

2007 ◽  
Author(s):  
Masako Kodera ◽  
Sachiyo Ito ◽  
Masahiko Hasunuma ◽  
Shigeru Kakinuma ◽  
Shinichi Ogawa ◽  
...  
Keyword(s):  
Stress Field ◽  
Field Evaluation ◽  
Nanometer Scale ◽  
Cathodoluminescence Spectroscopy

scholarly journals Observation of whispering gallery modes from hexagonal ZnO microdisks using cathodoluminescence spectroscopy

2013 ◽  
Vol 103 (17) ◽  
pp. 171102 ◽  
Author(s):  
Sumin Choi ◽  
Cuong Ton-That ◽  
Matthew R. Phillips ◽  
Igor Aharonovich
Keyword(s):  
Whispering Gallery Modes ◽  
Whispering Gallery ◽  
Cathodoluminescence Spectroscopy

Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 907-910
Author(s):  
Sergey P. Tumakha ◽  
L.M. Porter ◽  
D.J. Ewing ◽  
Qamar-ul Wahab ◽  
X.Y. Ma ◽  
...  
Keyword(s):  
Surface Defect ◽  
Deep Level ◽  
Polarized Light ◽  
Schottky Barriers ◽  
Double Barrier ◽  
Barrier Heights ◽  
Current Voltage ◽  
Cathodoluminescence Spectroscopy ◽  
Morphological Defects ◽  
Additional Defect

We have used depth-resolved cathodoluminescence spectroscopy (DRCLS) to correlate subsurface deep level emissions and double barrier current-voltage (I-V) characteristics across an array of Ni/4H-SiC diodes on the same epitaxial wafer. These results demonstrate not only a correspondence between these optical features and measured barrier heights, but they also suggest that such states may limit the range of SB heights in general. DRCLS of near-ideal diodes show a broad 2.45 eV emission at common to all diode areas and associated with either impurities or inclusions. Strongly non-ideal diodes exhibit additional defect emissions at 2.2 and 2.65 eV. On the other hand, there is no correlation between the appearance of morphological defects observed by polarized light microscopy or X-ray topography and the presence of double barrier characteristics. The DRCLS observations of defect level transitions that correlate with non-ideal Schottky barriers suggest that these sub-surface defect features can be used to predict Schottky barrier behavior.

scholarly journals Spatio-Time-Resolved Cathodoluminescence Spectroscopy Imaging: Microscopic Recombination Kinetics in Semi-Polar InGaN Quantum Wells

2010 ◽  
Vol 16 (S2) ◽  
pp. 812-813
Author(s):  
J Christen ◽  
F Bertram ◽  
S Metzner ◽  
T Wunderer ◽  
F Lipski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Cathodoluminescence Spectroscopy ◽  
Recombination Kinetics ◽  
Ingan Quantum Wells

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Interface properties of Si-SiO2-Ta2O5 structure by cathodoluminescence spectroscopy

2016 ◽  
Vol 119 (5) ◽  
pp. 055307 ◽  
Author(s):  
A. P. Baraban ◽  
V. A. Dmitriev ◽  
V. E. Drozd ◽  
V. A. Prokofiev ◽  
S. N. Samarin ◽  
...  
Keyword(s):  
Interface Properties ◽  
Cathodoluminescence Spectroscopy

Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces

2009 ◽  
Vol 45 (4-5) ◽  
pp. 206-213 ◽  
Author(s):  
L.J. Brillson ◽  
H.L. Mosbacker ◽  
D.L. Doutt ◽  
Y. Dong ◽  
Z.-Q. Fang ◽  
...  
Keyword(s):  
Cathodoluminescence Spectroscopy ◽  
Metal Interfaces

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

2002 ◽  
Vol 92 (12) ◽  
pp. 7153-7156 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Matsuda ◽  
Y. Yamaguchi ◽  
T. Matsunobe ◽  
Y. Nagasawa ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Silicon Dioxide Film ◽  
Cathodoluminescence Spectroscopy ◽  
Dioxide Film
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