Logic Control of Interface-Induced Charge-Trapping Effect for Ultrasensitive Gas Detection with All-Mirror-Image Symmetry

2016 ◽  
Vol 1 (3) ◽  
pp. 1600067 ◽  
Author(s):  
Chuancheng Jia ◽  
Qing Wang ◽  
Na Xin ◽  
Jian Zhou ◽  
Yao Gong ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Mirror Image ◽  
Gas Detection ◽  
Logic Control ◽  
Trapping Effect ◽  
Induced Charge

Unusual Threshold Voltage Shift Caused by Self-Heating-Induced Charge Trapping Effect

2010 ◽  
Vol 13 (4) ◽  
pp. H95
Author(s):  
Fu-Yen Jian ◽  
Ting-Chang Chang ◽  
An-Kuo Chu ◽  
Te-Chih Chen ◽  
Shih-Ching Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Charge Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Self Heating ◽  
Trapping Effect ◽  
Induced Charge

A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current–voltage measurements

2021 ◽  
Vol 60 (1) ◽  
pp. 011003
Author(s):  
Jeong Yong Yang ◽  
Chan Ho Lee ◽  
Young Taek Oh ◽  
Jiyeon Ma ◽  
Junseok Heo ◽  
...  
Keyword(s):  
Comparative Study ◽  
Charge Trapping ◽  
Pulsed Current ◽  
Trapping Effect ◽  
Current Voltage ◽  
P Type

Temperature effect on dielectric behavior of an industrial porcelain-type ceramic

2009 ◽  
Vol 87 (9) ◽  
pp. 973-980
Author(s):  
O. Hachicha ◽  
N. Ghorbel ◽  
A. Kallel ◽  
Z. Fakhfakh
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Charge Trapping ◽  
Dielectric Behavior ◽  
Mirror Image ◽  
Induced Current ◽  
Physical Mechanisms ◽  
Motion Process ◽  
Influence Of Temperature On ◽  
Scanning Electron

For a better understanding of the physical mechanisms involved in insulators submitted to electron irradiation inside a scanning electron microscope, it is important to investigate charge trapping and detrapping. The commonly used technique to deduce the trapping ability and the motion process of electric charges is based on two complementary experimental methods: the scanning electron microscope mirror effect (SEMME) and the induced current measurement (ICM). In this paper, our study is devoted to the influence of temperature on the behavior of porcelain materials during electron injection time. To evaluate the geometry of the trapped charge distribution, a detailed analysis using the mirror image formation and its evolution is developed.

Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor

2011 ◽  
Vol 99 (2) ◽  
pp. 022104 ◽  
Author(s):  
Te-Chih Chen ◽  
Ting-Chang Chang ◽  
Tien-Yu Hsieh ◽  
Wei-Siang Lu ◽  
Fu-Yen Jian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Gate Bias ◽  
Degradation Behavior ◽  
Bias Stress ◽  
Trapping Effect ◽  
Gate Bias Stress

The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors

2005 ◽  
Vol 98 (4) ◽  
pp. 044103 ◽  
Author(s):  
Pi-chun Juan ◽  
Yu-ping Hu ◽  
Fu-chien Chiu ◽  
Joseph Ya-min Lee
Keyword(s):  
Charge Trapping ◽  
Trapping Effect
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