Model for Radiation‐Induced Charge Trapping and Annealing in the Oxide Layer of MOS Devices

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Xing J. Zhou ◽  
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...  

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Vol 68 (12) ◽  
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P. Wang ◽  
C. Perini ◽  
A. O'Hara ◽  
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...  

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Vol 140 (1) ◽  
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Yu. D. Tkachev ◽  
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