scholarly journals Crystallographic Orientation Dependent Reactive Ion Etching in Single Crystal Diamond

2018 ◽  
Vol 30 (11) ◽  
pp. 1705501 ◽  
Author(s):  
Ling Xie ◽  
Tony X. Zhou ◽  
Rainer J. Stöhr ◽  
Amir Yacoby
Keyword(s):  
Single Crystal ◽  
Crystallographic Orientation ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Single Crystal Diamond

scholarly journals Precision micro-mechanical components in single crystal diamond by deep reactive ion etching

2018 ◽  
Vol 4 (1) ◽  
Author(s):  
Adrien Toros ◽  
Marcell Kiss ◽  
Teodoro Graziosi ◽  
Hamed Sattari ◽  
Pascal Gallo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Single Crystal Diamond ◽  
Mechanical Components

scholarly journals Precision Micro-Optical Components in Single Crystal Diamond by Deep Reactive Ion Etching

2019 ◽  
Author(s):  
Adrien Toros ◽  
Marcell Kiss ◽  
Teodoro Graziosi ◽  
Hamed Sattari ◽  
Pascal Gallo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Reactive Ion Etching ◽  
Optical Components ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Single Crystal Diamond

scholarly journals CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

2018 ◽  
Vol 59 (8) ◽  
pp. 21
Author(s):  
Vladimir Yu. Sadovoy ◽  
Vladimir D. Blank ◽  
Sergey A. Terentiev ◽  
Dmitriy V. Teteruk ◽  
Sergey Yu. Troschiev
Keyword(s):  
Single Crystal ◽  
Electron Emission ◽  
Crystallographic Orientation ◽  
Beam Energy ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Beam ◽  
Emission Coefficient ◽  
Secondary Electron Emission Coefficient ◽  
Single Crystal Diamond

Dependence of secondary electron emission coefficient on the chosen crystallographic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with energy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the direction (100), cubic sector, and also in intergrowth area that is confirmed by a picture of distribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown secondary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high energy primary beam for all orientations of single crystal diamond is shown: increase in secondary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.

Inductively-coupled-plasma reactive ion etching of single-crystal β-Ga2O3

2017 ◽  
Vol 56 (3) ◽  
pp. 030304 ◽  
Author(s):  
Liheng Zhang ◽  
Amit Verma ◽  
Huili (Grace) Xing ◽  
Debdeep Jena
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled
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