Technology modeling for emerging SOI devices

2003 ◽  
Author(s):  
M. Ieong ◽  
P. Oldiges
Keyword(s):  
Technology Modeling ◽  
Soi Devices

The advancement of silicon-on-insulator (SOI) devices and their basic properties

2020 ◽  
Vol 23 (3) ◽  
pp. 227-252
Author(s):  
T.E. Rudenko ◽  
◽  
A.N. Nazarov ◽  
V.S. Lysenko ◽  
◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Basic Properties ◽  
Soi Devices

Application of FIB Circuit Edit in Analysis of Memory Failure of SOI Devices

2006 ◽  
Author(s):  
Z. G. Song ◽  
S. K. Loh ◽  
X. H. Zheng ◽  
S.P. Neo ◽  
C. K. Oh
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Silicon On Insulator ◽  
First Case ◽  
Edx Analyses ◽  
Memory Failure ◽  
Soi Devices ◽  
Voltage Contrast ◽  
Soi Technology

Abstract This article presents two cases to demonstrate the application of focused ion beam (FIB) circuit edit in analysis of memory failure of silicon on insulator (SOI) devices using XTEM and EDX analyses. The first case was a single bit failure of SRAM units manufactured with 90 nm technology in SOI wafer. The second case was the whole column failure with a single bit pass for a SRAM unit. From the results, it was concluded that FIB circuit edit and electrical characterization is a good methodology for further narrowing down the defective location of memory failure, especially for SOI technology, where contact-level passive voltage contrast is not suitable.

scholarly journals Background, Applications and Issues of the Experimental Designs for Mixture in the Food Sector

Foods ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 1128
Author(s):  
Giacomo Squeo ◽  
Davide De Angelis ◽  
Riccardo Leardi ◽  
Carmine Summo ◽  
Francesco Caponio
Keyword(s):  
Science And Technology ◽  
Experimental Designs ◽  
Food Science ◽  
Modified Atmosphere ◽  
Global Knowledge ◽  
Food Sector ◽  
Life Improvement ◽  
Technology Modeling ◽  
Mixture Designs ◽  
Simplex Lattice

Background: Mixtures play a key role in Food Science and Technology. For studying them, rational approaches should be used. In detail, the experimental designs for mixtures are useful tools for studying the effects of ingredients/components in formulations. Results: Food Science and Technology is the fourth category among the total records considered in this review. The applications span from food formulation to the composition of modified atmosphere, shelf-life improvement and bioactives extraction. However, the majority of the studies regards few products and ingredients. Simplex-lattice and simplex-centroid designs are the most common used, although some optimal designs, such as the D-optimal, have also interesting applications. Finally, some issues are highlighted, which basically regard the interpretation of the models coefficients and the lack of model validation. Conclusion: In the last decade, mixture designs have been fairly used in the field of Food Science and Technology. Modeling the response(s) allows researchers to achieve a global knowledge of the system under study within the defined experimental domain. However, the majority of application has regarded limited classes of products, and thus an increase in the spectrum of applications is desired.

Analysis and Optimization of the Back-Gate Effect on Lateral High-Voltage SOI Devices

2005 ◽  
Vol 52 (7) ◽  
pp. 1649-1655 ◽  
Author(s):  
S. Schwantes ◽  
T. Florian ◽  
T. Stephan ◽  
M. Graf ◽  
V. Dudek
Keyword(s):  
High Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

2008 ◽  
Vol 55 (6) ◽  
pp. 3259-3264 ◽  
Author(s):  
Farah E. Mamouni ◽  
Sriram K. Dixit ◽  
Ronald D. Schrimpf ◽  
Philippe C. Adell ◽  
Ivan S. Esqueda ◽  
...  
Keyword(s):  
Gate Length ◽  
Fully Depleted ◽  
Band To Band Tunneling ◽  
Drain Bias ◽  
Soi Devices

Analysis of the Back-Gate Effect on the On-State Breakdown Voltage of Smartpower SOI Devices

2006 ◽  
Author(s):  
Stefan Schwantes ◽  
Josef Furthaler ◽  
Bernd Schauwecker ◽  
Franz Dietz ◽  
Michael Graf ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Back Gate ◽  
Gate Effect ◽  
Soi Devices ◽  
State Breakdown

Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices

2007 ◽  
Author(s):  
Yiming Li ◽  
Chih-Hong Hwang ◽  
Hsuan-Ming Huang ◽  
Ta-Ching Yeh
Keyword(s):  
Soi Devices
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