12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.

Ultrafast carrier trapping in high energy ion implanted indium phosphide

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242760 ◽

2005 ◽

Author(s):

C. Camody ◽

H. Boudinov ◽

H.H. Tan ◽

C. Jagadish ◽

L.V. Dao ◽

...

Keyword(s):

Indium Phosphide ◽

High Energy ◽

Carrier Trapping ◽

Ultrafast Carrier ◽

Ion Implanted

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Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniques

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242742 ◽

2005 ◽

Author(s):

P. Sutta

Keyword(s):

Stress Gradient ◽

Oxide Films ◽

Gradient Formation

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Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242747 ◽

2005 ◽

Author(s):

K. Jarasiunas ◽

M. Sudzius ◽

R. Aleksiejunas

Keyword(s):

Deep Trap ◽

Four Wave Mixing ◽

Carrier Dynamics ◽

Wave Mixing ◽

Time Resolved

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Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242748 ◽

2005 ◽

Author(s):

F. Dubecky ◽

B. Zat'ko ◽

C. Ferrari ◽

V. Smatko ◽

A. Forster ◽

...

Keyword(s):

Minority Carrier ◽

Carrier Extraction

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Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242753 ◽

2005 ◽

Author(s):

K. Kawasaki ◽

K. Fujiwara ◽

N. Sano

Keyword(s):

Quantum Wells ◽

Tunneling Resonances

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Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242749 ◽

2005 ◽

Author(s):

T. Kusano ◽

A. Satake ◽

K. Fujiwara ◽

S. Shimomura ◽

T. Kitada ◽

...

Keyword(s):

Quantum Wells ◽

Gaas Substrates

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Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242744 ◽

2005 ◽

Author(s):

V.A. Ligatchev ◽

T.K.S. Wong ◽

B. Liu ◽

Rusli

Keyword(s):

Electronic Spectrum ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Dielectric Films ◽

Transient Spectroscopy

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Gamma-radiation hardness of bulk semi-insulating GaAs

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242774 ◽

2005 ◽

Author(s):

T. Ly Anh ◽

A. Perd'ochova ◽

V. Necas ◽

P. Bohacek ◽

M. Sekacova

Keyword(s):

Gamma Radiation ◽

Radiation Hardness

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Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242765 ◽

2005 ◽

Author(s):

I.A. Karpovich ◽

S.B. Levichev ◽

N.V. Baidus ◽

B.N. Zvonkov ◽

D.O. Filatov

Keyword(s):

Quantum Dot ◽

Quantum Well ◽

Self Organized

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Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002. ◽

10.1109/sim.2002.1242763 ◽

2005 ◽

Author(s):

C.A. Barrios ◽

S. Lowdudoss

Keyword(s):

Laser Diodes ◽

Leakage Currents ◽

Heterostructure Laser ◽

Buried Heterostructure

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12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ultrafast carrier trapping in high energy ion implanted indium phosphide

Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniques

Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique

Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface

Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells

Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates

Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy

Gamma-radiation hardness of bulk semi-insulating GaAs

Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer

Export Citation Format

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ultrafast carrier trapping in high energy ion implanted indium phosphide

Lattice stress gradient formation in oxide films deposited on substrates when used sputtering techniques

Deep-trap governed carrier dynamics in semi-insulating crystals analyzed by time-resolved four-wave mixing technique

Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface

Non-uniform photocurrent transport and tunneling resonances in composite InGaAs/AlGaAs and GaAs/AlGaAs quantum wells

Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates

Electronic spectrum of defects in SiOCH dielectric films measured by deep level transient spectroscopy

Gamma-radiation hardness of bulk semi-insulating GaAs

Photoclectronic properties of InGaAs/GaAs heterostructures with combined quantum well and self-organized quantum dot layers

Leakage currents in GaAs/AlGaAs-based buried-heterostructure laser diodes with semi-insulating GaInP:Fe burying layer

12th International Conference on Semiconducting and Insulating Materials, 2002. SIMC-XII-2002.
Latest Publications