Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates

2005 ◽  
Author(s):  
T. Kusano ◽  
A. Satake ◽  
K. Fujiwara ◽  
S. Shimomura ◽  
T. Kitada ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Gaas Substrates

Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°‐off GaAs substrates using ethyldimethylindium

1992 ◽  
Vol 60 (8) ◽  
pp. 1007-1009 ◽  
Author(s):  
T. Y. Wang ◽  
D. F. Welch ◽  
D. R. Scifres ◽  
D. W. Treat ◽  
R. D. Bringans ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrates

Growth and characterization of TlInGaAsN/TlGaAsN triple quantum wells on GaAs substrates

2010 ◽  
Author(s):  
Kang Min Kim ◽  
Yuji Sakai ◽  
Daivasigamani Krishnamurthy ◽  
Shigehiko Hasegawa ◽  
Hajime Asahi
Keyword(s):  
Quantum Wells ◽  
Gaas Substrates

MBE Growth and Characterization of InSb/AlxIn1−xSb Strained Layer Structures

1996 ◽  
Vol 450 ◽  
Author(s):  
K. J. Goldammer ◽  
W. K. Liu ◽  
W. Ma ◽  
M. B. Santos ◽  
R. J. Hauenstein ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Mobility ◽  
Structural Quality ◽  
Electron Systems ◽  
X Ray Diffraction ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
Layer Structures

ABSTRACTThree types of structures were fabricated using molecular beam epitaxy. High-resolution x-ray diffraction measurements demonstrated the high structural quality of InSb/AlxIn1−xSb superlattices grown on InSb and GaAs substrates. Hall effect data revealed the effect of substrate temperature on autocompensation in InSb δ-doped with Si. Two-dimensional electron systems with a high mobility were realized in InSb quantum wells with AlxIn1−xSb barriers δ-doped with Si.

Photoreflectance Characterization of InGaAs/GaAs Superlattices Grown on [111]-Oriented Substrates

1993 ◽  
Vol 324 ◽  
Author(s):  
R. G. Rodrigues ◽  
K. Yang ◽  
L. J. Schowalter ◽  
J. M. Borrego
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Photovoltaic Effect ◽  
Quantum Structures ◽  
Optical Transitions ◽  
Linear Absorption ◽  
Free Carriers ◽  
Gaas Substrates ◽  
Surface Electric Field

AbstractWe report the results of a photoreflectance (PR) study of InGaAs/GaAs strained-layer quantum wells and superlattices (SLSs) grown by MBE on [111]B GaAs substrates. Under our measurement conditions, the PR spectra display features we can relate to the bandgaps of both materials and to optical transitions in the quantum structures. Using the photovoltaic effect to vary the surface electric field of our i-n+ and p+-i-n+ samples in a strictly contactless manner, we find optical transitions red-shifting with increasing intensity of illumination from a CW HeNe laser in [111]-grown structures, a well known effect which can be attributed to the straingenerated electric field (SGEF) present in these structures. We also find experimental support for the predicted effectiveness of free-carriers in screening the SGEF and thereby originating highly non-linear absorption.

Characterization of InGaAs/GaAs strained‐layer quantum wells grown on (311)A GaAs substrates

1995 ◽  
Vol 66 (1) ◽  
pp. 93-95 ◽  
Author(s):  
Mitsuo Takahashi ◽  
Pablo Vaccaro ◽  
Kazuhisa Fujita ◽  
Toshihide Watanabe
Keyword(s):  
Quantum Wells ◽  
Strained Layer ◽  
Gaas Substrates

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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