Indication of minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface

2005 ◽  
Author(s):  
F. Dubecky ◽  
B. Zat'ko ◽  
C. Ferrari ◽  
V. Smatko ◽  
A. Forster ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Carrier Extraction

Computer Modeling of MWIR Homojunction Photodetector Based on Indium Antimonide

2011 ◽  
Vol 383-390 ◽  
pp. 6806-6810 ◽  
Author(s):  
M. Nadimi ◽  
A. Sadr
Keyword(s):  
Indium Antimonide ◽  
Thermal Noise ◽  
Minority Carrier ◽  
Spectral Response ◽  
Energy Band Diagram ◽  
Doping Profile ◽  
Zero Bias ◽  
Electric Field Profile ◽  
Area Product ◽  
Carrier Extraction

High operating temperatures infrared photodetectors are needed for improving the performance of existing military and civilian infrared systems. To obtain high device performance at higher temperatures, the thermally generated noise required to be reduced. Minority-carrier extraction and exclusion techniques are the approaches for decreasing the thermal noise of infrared systems. In the present work, an InSb extraction diode was studied and simulated for operation in the MWIR region. The simulation was performed using ATLAS device simulator from SILVACO®. The energy band diagram, doping profile, electric field profile, dark current and spectral response were calculated as a function of device thickness, applied reverse voltage and operating wavelength. The simulated photodetector exhibited a zero bias resistance-area product, R0A = 1.6×〖10〗^(-3) Ω〖.cm〗^2 at 240K.

Minority Carrier Extraction in Germanium

1955 ◽  
Vol 100 (4) ◽  
pp. 1047-1055 ◽  
Author(s):  
Ralph Bray
Keyword(s):  
Minority Carrier ◽  
Carrier Extraction

Minority‐carrier extraction and accumulation near metal‐semiconductor interfaces

1981 ◽  
Vol 52 (11) ◽  
pp. 6723-6728 ◽  
Author(s):  
S. Rahimi ◽  
J.‐C. Manifacier ◽  
H. K. Henisch
Keyword(s):  
Minority Carrier ◽  
Semiconductor Interfaces ◽  
Carrier Extraction

scholarly journals Nickel Oxide Particles Catalyze Photochemical Hydrogen Evolution from Water—Nanoscaling Promotes P-Type Character and Minority Carrier Extraction

ACS Nano ◽  
2015 ◽  
Vol 9 (5) ◽  
pp. 5135-5142 ◽  
Author(s):  
Benjamin A. Nail ◽  
Jorie M. Fields ◽  
Jing Zhao ◽  
Jiarui Wang ◽  
Matthew J. Greaney ◽  
...  
Keyword(s):  
Nickel Oxide ◽  
Hydrogen Evolution ◽  
Minority Carrier ◽  
Oxide Particles ◽  
Type Character ◽  
P Type ◽  
Carrier Extraction

Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors

2015 ◽  
Vol 44 (9) ◽  
pp. 3036-3043 ◽  
Author(s):  
David Z.-Y. Ting ◽  
Alexander Soibel ◽  
Linda Höglund ◽  
Sarath D. Gunapala
Keyword(s):  
Infrared Detectors ◽  
Minority Carrier ◽  
Unipolar Barrier ◽  
Carrier Extraction

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

Study of Electron Transport in a-Si:H p-i-n Diodes: Use of the Transient Space-Charge-Limited-Current Technique

1995 ◽  
Vol 377 ◽  
Author(s):  
G. J. Adriaenssens ◽  
B. Yan ◽  
A. Eliat
Keyword(s):  
Space Charge ◽  
Conduction Band Edge ◽  
Time Range ◽  
Space Charge Limited Current ◽  
Transport Parameters ◽  
Limited Current ◽  
Emission Time ◽  
Time Regime ◽  
Carrier Extraction ◽  
Space Charge Limited

ABSTRACTA full and detailed transient space-charge-limited current (T-SCLC) study of a-Si:H p-i-n diodes has been carried out in the time range from 108s to 10s. In the short-time regime, general features of T-SCLC such as the current cusp and the carrier extraction period were observed, and related transport parameters were deduced. Electron emission from deep states was studied by measuring the current transients well beyond the extraction time. The emission time is thermally activated at temperatures higher than 250K and levels off at lower temperatures. The high temperature behaviour places the upper edge of the deep states at 0.42–0.52eV below the conduction band edge, and the attempt-to-escape frequency in the range of 1011-1013Hz. An observed shift of emission time with light intensity is attributed to defect relaxation.

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