2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop]
Latest Publications

TOTAL DOCUMENTS

32

(FIVE YEARS 0)

H-INDEX

2

(FIVE YEARS 0)

Published By IEEE

0790801205

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Electrical and thermal modeling of AlGaN/GaN HEMTS on diamond silicon substrates

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.5483613 ◽

2008 ◽

Cited By ~ 2

Author(s):

D. Mcglone ◽

T. Weatherford ◽

J. Gillespie ◽

G. Via ◽

J. Zimmer

Keyword(s):

Thermal Modeling ◽

Silicon Substrates ◽

Gan Hemts

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JEDEC

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.4686643 ◽

2008 ◽

Author(s):

Peter Ersland ◽

Ken Mcghee

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Method for determining DC/RF survivability limits of semiconductor circuits

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.5483624 ◽

2008 ◽

Author(s):

C. Gil ◽

P. Ersland ◽

A. Li

Keyword(s):

Semiconductor Circuits

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HBT lifetime prediction as a function of temperature

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.5483622 ◽

2008 ◽

Author(s):

Tim Henderson ◽

John Hitt ◽

Ken Decker ◽

Keith Buckley

Keyword(s):

Lifetime Prediction

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Blank page

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.4686656 ◽

2008 ◽

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Copyright

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.4686641 ◽

2008 ◽

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Session III Reliability under application conditions

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.4686653 ◽

2008 ◽

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Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.5483615 ◽

2008 ◽

Cited By ~ 2

Author(s):

M. Dammann ◽

W. Pletschen ◽

P. Waltereit ◽

W. Bronner ◽

R. Quay ◽

...

Keyword(s):

Mobile Communication ◽

Communication Systems ◽

Degradation Mechanism ◽

Next Generation ◽

Mobile Communication Systems ◽

Gan Hemts

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Physical degradation of GaN HEMT device observed in TEM during reliability test

2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.5483616 ◽

2008 ◽

Author(s):

S.Y. Park ◽

C. Floresca ◽

M.J. Kim ◽

U. Chowdhury ◽

J.L. Jimenes ◽

...

Keyword(s):

Reliability Test ◽

Gan Hemt ◽

Physical Degradation

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2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ◽

10.1109/rocs.2008.4686652 ◽

2008 ◽

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