Electrical and thermal modeling of AlGaN/GaN HEMTS on diamond silicon substrates

2008 ◽  
Author(s):  
D. Mcglone ◽  
T. Weatherford ◽  
J. Gillespie ◽  
G. Via ◽  
J. Zimmer
Keyword(s):  
Thermal Modeling ◽  
Silicon Substrates ◽  
Gan Hemts

Material and device issues of AlGaN/GaN HEMTs on silicon substrates

2003 ◽  
Vol 34 (5-8) ◽  
pp. 435-437 ◽  
Author(s):  
P. Javorka ◽  
A. Alam ◽  
M. Marso ◽  
M. Wolter ◽  
J. Kuzmik ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemts

High Microwave and Noise Performance of 0.17-<tex>$muhbox m$</tex>AlGaN–GaN HEMTs on High-Resistivity Silicon Substrates

2004 ◽  
Vol 25 (4) ◽  
pp. 167-169 ◽  
Author(s):  
A. Minko ◽  
V. Hoel ◽  
S. Lepilliet ◽  
G. Dambrine ◽  
J.C. DeJaeger ◽  
...  
Keyword(s):  
High Resistivity ◽  
Silicon Substrates ◽  
Noise Performance ◽  
Gan Hemts ◽  
High Resistivity Silicon

Hybrid Large-Signal/Lumped-Element Electro-Thermal Modeling of GaN-HEMTs

2009 ◽  
Vol 57 (12) ◽  
pp. 3163-3170 ◽  
Author(s):  
F. Bertoluzza ◽  
G. Sozzi ◽  
N. Delmonte ◽  
R. Menozzi
Keyword(s):  
Thermal Modeling ◽  
Large Signal ◽  
Lumped Element ◽  
Gan Hemts

scholarly journals Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

2019 ◽  
Author(s):  
Melisa Ekin Gulseren ◽  
Berkay Bozok ◽  
Gokhan Kurt ◽  
Omer Ahmet Kayal ◽  
Mustafa Ozturk ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemts

Fabrication and characterization of high-voltage AlGaN/GaN HEMTs on silicon substrates (Conference Presentation)

2019 ◽  
Author(s):  
Anna Szerling ◽  
Marek Ekielski ◽  
Maciej Kozubal ◽  
Karolina Pagowska ◽  
Andrzej Taube ◽  
...  
Keyword(s):  
High Voltage ◽  
Silicon Substrates ◽  
Gan Hemts ◽  
Fabrication And Characterization

MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates

2007 ◽  
Vol 298 ◽  
pp. 843-847 ◽  
Author(s):  
M. Fieger ◽  
M. Eickelkamp ◽  
L. Rahimzadeh Koshroo ◽  
Y. Dikme ◽  
A. Noculak ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemts

scholarly journals Determination of channel temperature in AlGaN/GaN HEMTs grown on sapphire and silicon substrates using DC characterization method

2002 ◽  
Vol 49 (8) ◽  
pp. 1496-1498 ◽  
Author(s):  
J. Kuzmik ◽  
R. Javorka ◽  
A. Alam ◽  
M. Marso ◽  
M. Heuken ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Channel Temperature ◽  
Gan Hemts ◽  
Dc Characterization

Material and Device Issues of AlGaN/GaN HEMTs on Silicon Substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
P. Javorka ◽  
A. Alam ◽  
M. Marso ◽  
M. Wolter ◽  
A. Fox ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Current Gain ◽  
Commercial Application ◽  
Material Structure ◽  
Silicon Substrates ◽  
Trap Level ◽  
Si Substrates ◽  
Channel Temperature ◽  
Rf Devices ◽  
Gan Hemts

ABSTRACTResults on the preparation and properties of AlGaN/GaN HEMTs on silicon substrates are presented and selected issues related to the material structure and device performance devices are discussed. Virtually crack-free AlGaN/GaN heterostructures (xAlN ≅ 0.25), with low surface roughness (rms of 0.64 nm), ns ≅ 1×1013 cm−2 and μ ≅ 1100 cm2/V s at 300 K, were grown by LP-MOVPE on 2-inch (111)Si substrates. HEMT devices with Lg = 0.3–0.7 μm were prepared by conventional device processing steps. Photoionization spectroscopy measurements have shown that a trap level of 1.85 eV, additional to two levels of 2.9 and 3.2 eV found before on GaN-based HEMTs on sapphire, is present in the structures investigated. Self-heating effects were studied by means of temperature dependent dc measurements. The channel temperature of a HEMT on Si increases with dissipated power much slower than for similar devices on sapphire substrate (e.g. reaches 95 and 320 °C on Si and sapphire, respectively, for 6 W/mm power). Prepared AlGaN/GaN/Si HEMTs exhibit saturation currents up to 0.91 A/mm, a good pinch-off, peak extrinsic transconductances up to 150 mS/mm and static heat dissipation capability up to ∼16 W/mm. Unity current gain frequencies fT up to 21 and 32 GHz were obtained on devices with gate length of 0.7 and 0.5 μm, respectively. The saturation current and fT values are comparable to those known for similar devices using sapphire and SiC substrates. Properties of AlGaN/GaN/Si HEMTs investigated show that this technology brings a prospect for commercial application of high power rf devices.

scholarly journals AlGaN/GaN HEMTs on (111) silicon substrates

2002 ◽  
Vol 23 (1) ◽  
pp. 4-6 ◽  
Author(s):  
P. Javorka ◽  
A. Alam ◽  
M. Wolter ◽  
A. Fox ◽  
M. Marso ◽  
...  
Keyword(s):  
Silicon Substrates ◽  
Gan Hemts
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