12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
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High performance 300 V IGBTs

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856810 ◽

2002 ◽

Author(s):

P.M. Shenoy ◽

J. Yedinak ◽

J. Gladish

Keyword(s):

High Performance

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The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856821 ◽

2002 ◽

Cited By ~ 5

Author(s):

T. Trajkovic ◽

F. Udrea ◽

P.R. Waind ◽

G.A.J. Amaratunga

Keyword(s):

High Voltage

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A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856847 ◽

2002 ◽

Cited By ~ 9

Author(s):

A. Narazaki ◽

J. Maruyama ◽

T. Kayumi ◽

H. Hamachi ◽

J. Moritani ◽

...

Keyword(s):

State Resistance

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Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856814 ◽

2002 ◽

Cited By ~ 1

Author(s):

B. You ◽

A.Q. Huang ◽

J.K.O. Sin ◽

A. Xu

Keyword(s):

Dynamic Characteristics ◽

Static And Dynamic Characteristics

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An advanced FWD design concept with superior soft reverse recovery characteristics

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856786 ◽

2002 ◽

Cited By ~ 8

Author(s):

M. Nemoto ◽

A. Nishiura ◽

T. Naito ◽

M. Kirisawa ◽

M. Otsuki ◽

...

Keyword(s):

Design Concept

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LDMOS implementation in a 0.35 μm BCD technology (BCD6)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856835 ◽

2002 ◽

Cited By ~ 34

Author(s):

A. Moscatelli ◽

A. Merlini ◽

G. Croce ◽

P. Galbiati ◽

C. Contiero

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A novel vertical deep trench RESURF DMOS (VTR-DMOS)

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856805 ◽

2002 ◽

Cited By ~ 10

Author(s):

J. Glenn ◽

J. Siekkinen

Keyword(s):

Deep Trench

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Advantages of thick CVD gate oxide for trench MOS gate structures

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856778 ◽

2002 ◽

Cited By ~ 6

Author(s):

K. Nakamura ◽

S. Kusunoki ◽

H. Nakamura ◽

M. Harada

Keyword(s):

Gate Oxide ◽

Mos Gate

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Advanced on-chip polysilicon CMOS analog and driver circuit technology for intelligent discrete devices

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856780 ◽

2002 ◽

Author(s):

T. Matsudai ◽

T. Kojima ◽

A. Nakagawa

Keyword(s):

Driver Circuit ◽

On Chip ◽

Circuit Technology

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Using "Adaptive resurf" to improve the SOA of LDMOS transistors

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) ◽

10.1109/ispsd.2000.856840 ◽

2002 ◽

Cited By ~ 16

Author(s):

P. Hower ◽

J. Lin ◽

S. Merchant ◽

S. Paiva

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

High performance 300 V IGBTs

The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions

A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes

An advanced FWD design concept with superior soft reverse recovery characteristics

LDMOS implementation in a 0.35 μm BCD technology (BCD6)

A novel vertical deep trench RESURF DMOS (VTR-DMOS)

Advantages of thick CVD gate oxide for trench MOS gate structures

Advanced on-chip polysilicon CMOS analog and driver circuit technology for intelligent discrete devices

Using "Adaptive resurf" to improve the SOA of LDMOS transistors

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
Latest Publications