A 0.35 μm trench gate MOSFET with an ultra low on state resistance and a high destruction immunity during the inductive switching

2002 ◽  
Author(s):  
A. Narazaki ◽  
J. Maruyama ◽  
T. Kayumi ◽  
H. Hamachi ◽  
J. Moritani ◽  
...  
Keyword(s):  
State Resistance

Review on Switches for Power Applications: Macro to Micro

2019 ◽  
Vol 12 (3) ◽  
pp. 200-209
Author(s):  
Femi Robert
Keyword(s):  
Leakage Current ◽  
Power Loss ◽  
Low Cost ◽  
Electrical System ◽  
High Isolation ◽  
Fast Switching ◽  
Environmental Friendly ◽  
State Resistance ◽  
Very High ◽  
Bulk Production

Background: Switches are important component in electrical system. The switches needs to have the advantages of low ON-state resistance, very high OFF-state resistance, high isolation, no leakage current, less power loss, fast switching, high linearity, small size, arcless and low cost in bulk production. Also these switches have to be reliable and environmental friendly. Methods: In this paper, macro and microswitches for power applications are extensively reviewed and summarized. Various types of switches such as mechanical, solid-state, hybrid and micromechanical switches have been used for power applications are reviewed. The importance and challenge in achieving arcless switching is presented. Results: The use of micromechanical switches for power applications, actuation techniques, switching modes, reliability and lifetime are also reviewed. The modeling and design challenges are also reviewed. Conclusion: The applications of micromechanical switches shows that the switches can reduce the leakage current in battery operated systems and reduce the size of the system considerably.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

scholarly journals Effects of bracket design on critical contact angle

2013 ◽  
Vol 83 (5) ◽  
pp. 877-884 ◽  
Author(s):  
Xiaomo Liu ◽  
Peng Ding ◽  
Jiuxiang Lin
Keyword(s):  
Contact Angle ◽  
Stainless Steel ◽  
Linear Regression ◽  
Resistance To Sliding ◽  
The Relationship ◽  
State Resistance ◽  
Critical Contact ◽  
Bracket Design

ABSTRACT Objective: To explore how the position of the bracket slots relative to the archwire influences the friction between them, and how bracket design affects the critical contact angle (θc). Materials and Methods: Two kinds of stainless steel archwires (0.016 and 0.019 × 0.025-inch) were tested against four kinds of brackets (Transmission Straight Archwire bracket, Domestic MBT bracket, Tip-Edge Plus bracket, and BioQuick self-ligation bracket) in the dry state. Resistance to sliding (RS) was measured as an increase in contact angle (θ). The value of θc was calculated by two linear regression lines. Results: Friction remained stable when θ < θc, then increased linearly when θ > θc. The θc values of the Tip-Edge Plus bracket and Transmission Straight Archwire bracket were significantly larger than those for the Domestic MBT bracket and BioQuick self-ligation bracket. Conclusions: The relationship between the archwire and bracket slot significantly affects the resistance to sliding. The “edge-off” structure of the Tip-Edge Plus bracket and Transmission Straight Archwire bracket could help to increase the θc value, and to expand the passive configuration range.

scholarly journals Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

Electronics ◽  
2021 ◽  
Vol 10 (10) ◽  
pp. 1202
Author(s):  
Wei Wang ◽  
Yan Liang ◽  
Minghui Zhang ◽  
Fang Lin ◽  
Feng Wen ◽  
...  
Keyword(s):  
Gradual Increase ◽  
Dynamic Resistance ◽  
Mechanism Analysis ◽  
Pulse Test ◽  
Gan Hemt ◽  
Resistance Degradation ◽  
Dielectric Model ◽  
Leaky Dielectric Model ◽  
State Resistance ◽  
Stress Voltage

The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. The non-monotonic performance of dynamic RON with off-state voltage ranging from 50 to 400 V is ascribed to the “leaky dielectric” model. The highest normalized RON value of 1.22 appears at 150 and 200 V. The gradual increase and following maximum of dynamic RON are found when the device is exposed to a stress voltage for an extended stress time under 100 and 200 V, which is due to a much longer trapping time compared to detrapping time related to deep acceptors and donors. No obvious RON degradation, thanks to the suppressed trapping effect, is observed at higher VDS. From the multi-pulse test, the dynamic RON is seen to be insensitive to the frequency. It is demonstrated that the leakage, especially under source and drain contact, is a key issue in the dynamic resistance degradation.

Electron Irradiation of YBa2Cu3O7 at low Temperatures

1987 ◽  
Vol 99 ◽  
Author(s):  
B. Stritzker ◽  
W. Zander ◽  
F. Dworschak ◽  
U. Poppe ◽  
K. Fischer
Keyword(s):  
Transition Temperature ◽  
Electron Irradiation ◽  
Normal State ◽  
Low Temperatures ◽  
Superconducting Transition Temperature ◽  
Superconducting Transition ◽  
Radiation Induced ◽  
State Resistance ◽  
Normal State Resistance

ABSTRACTBulk samples of YBa2Cu3O7−x have been homogenously irradiated with 3 MeV electrons at temperatures below 20 K. Whereas the superconducting transition temperature, Tc, drops dramatically with increasing dose the width of the transition remains unchanged (Δ Tc ≤ 1.5 K). The normal state resistance at 100 K increases substantially during the electron irradiation. Several irreproducible experiments can be interpreted with a radiation induced, unstable increase of Tc.

Rhetorical Federalism: The Role of State Resistance in Health Care Decision-Making

2011 ◽  
Vol 39 (S1) ◽  
pp. 73-76
Author(s):  
Elizabeth Weeks Leonard
Keyword(s):  
Health Care ◽  
Health Insurance ◽  
The United States ◽  
Administrative Capacity ◽  
Limited Government ◽  
Local Diversity ◽  
Patient Protection ◽  
Health Care Regulation ◽  
State Resistance

The Patient Protection and Affordable Care Act (ACA) represents the most significant reform of the United States health care system in decades. ACA also substantially amplifies the federal role in health care regulation. Among other provisions, ACA expands government health care programs, imposes detailed federal standards for commercial health insurance policies, creates national requirements on employers and individuals, and enlists state administrative capacity to implement various federal reforms. In response, a persistent voice in the protracted, contentious debate surrounding ACA was, and continues to be, resistance from states. The rhetoric of federalism — states’ rights, reserved powers, state sovereignty, limited government, and local diversity — resonates deeply even around provisions of ACA that do not specifically implicate state interests. For example, the loudest and most persistent state objections target the new mandate that individuals maintain health insurance, a requirement imposed by ACA and enforced through federal tax penalties.

Performance Tests of a 4,1x4,1mm2 SiC LCVJFET for a DC/DC Boost Converter Application

2011 ◽  
Vol 679-680 ◽  
pp. 722-725 ◽  
Author(s):  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Hans Peter Nee
Keyword(s):  
Voltage Drop ◽  
Short Circuit ◽  
Boost Converter ◽  
The Body ◽  
Switching Loss ◽  
Lateral Channel ◽  
Short Circuit Test ◽  
Higher Temperature ◽  
High Temperature Operation ◽  
State Resistance

A 4.1x4.1mm2, 100mΩ 1,2kV lateral channel vertical junction field effect transistor (LCVJFET) built in silicon carbide (SiC) from SiCED, to use as the active switch component in a high-temperature operation DC/DC-boost converter, has been investigated. The switching loss for room temperature (RT) and on-state resistance (Ron) for RT up to 170°C is investigated. Since the SiC VJFET has a buried body diode it is also ideal to use instead of a switch and diode setup. The voltage drop over the body diode decreases slightly with a higher temperature. A short-circuit test has also been conducted, which shows a high ruggedness.

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

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