P-3: Effect of Light Shielding Metal on the Performance of a-IGZO TFTs with a Self-Aligned Top-Gate Structure

2017 ◽  
Vol 48 (1) ◽  
pp. 1234-1237 ◽  
Author(s):  
Mian Zeng ◽  
Shu-jhih Chen ◽  
Xiao Di Liu ◽  
Li Mei Zeng ◽  
Wen Ying Li ◽  
...  
Keyword(s):  
Gate Structure ◽  
Top Gate Structure ◽  
Effect Of Light

Synthesis, characterization and OFET property of four diaminouracil bridged novel ball-type phthalocyanines

2018 ◽  
Vol 22 (01n03) ◽  
pp. 149-156 ◽  
Author(s):  
Ayşegül Yazıcı ◽  
Ayşe Avcı ◽  
Ahmet Altındal ◽  
Bekir Salih ◽  
Özer Bekaroğlu
Keyword(s):  
Field Effect ◽  
Active Material ◽  
Text Type ◽  
H Nmr ◽  
Gate Structure ◽  
Nucleophilic Displacement ◽  
Ft Ir ◽  
Effect Transistor ◽  
Top Gate Structure

New ball-type metallobisphthalocyanines 2 (Co[Formula: see text]Pc[Formula: see text] and 3(Zn[Formula: see text]Pc[Formula: see text] were synthesized from the corresponding 4,4[Formula: see text]-[(5,6-diaminopyrimidine-2,4-diyl)bis(oxy)] diphytalonitril 1, which can be obtained by a nucleophilic displacement reaction of 4-nitrophthalonitrile with 5,6-diaminouracil sulfate. Characterization of novel compounds was performed by UV-vis, FT-IR, [Formula: see text]H-NMR, MALDI-TOF mass spectroscopy and elemental analysis. Organic field effect transistor devices (OFETs) with top gate structure were fabricated using these novel compounds as the active material. The devices were characterized by means of their output and transfer characteristics, and it was found that these OFET devices exhibit [Formula: see text]-type behavior. When compared with the 2-based device, the OFET with 3 showed higher field effect mobility and larger on/of current ratio.

scholarly journals Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

RSC Advances ◽  
2019 ◽  
Vol 9 (62) ◽  
pp. 36293-36300 ◽  
Author(s):  
Jong Beom Ko ◽  
Seung-Hee Lee ◽  
Kyung Woo Park ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Gate Structure ◽  
Top Gate Structure ◽  
Oxide Tfts

By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.

Nanocrystalline Silicon TFTs With 50 nm Thick Deposited Channel Layer, 10 cm2/Vs Electron Mobility and 108 On/Off Current Ratio

2001 ◽  
Vol 664 ◽  
Author(s):  
Robert B. Min ◽  
Sigurd Wagner
Keyword(s):  
Field Effect ◽  
High Mobility ◽  
Nanocrystalline Silicon ◽  
Channel Length ◽  
High Electron ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Gate Structure ◽  
Electron Field ◽  
Top Gate Structure

ABSTRACTThin film transistors were made using 50 nm thick directly deposited nanocrystalline silicon channel layers. The transistors have coplanar top gate structure. The nanocrystalline silicon was deposited from discharges in silane, hydrogen and silicon tetrafluoride. The transistors combine a high electron field effect mobility of ∼ 10 cm2/Vs with a low “off” current of ∼ 10−14 A per µm of channel length, and an “on”/“off” current ratio of ∼ 108. This result shows that directly deposited silicon can combine high mobility with low “off” currents.

Porphyrin–Silicon Hybrid Field-Effect Transistor with Individually Addressable Top-gate Structure

ACS Nano ◽  
2011 ◽  
Vol 6 (1) ◽  
pp. 183-189 ◽  
Author(s):  
Myeong-Lok Seol ◽  
Sung-Jin Choi ◽  
Chang-Hoon Kim ◽  
Dong-Il Moon ◽  
Yang-Kyu Choi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Structure ◽  
Effect Transistor ◽  
Top Gate Structure

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

2014 ◽  
Vol 35 (3) ◽  
pp. 357-359 ◽  
Author(s):  
Jun Yong Bak ◽  
Min-Ki Ryu ◽  
Sang Hee Ko Park ◽  
Chi Sun Hwang ◽  
Sung Min Yoon
Keyword(s):  
Charge Trap ◽  
Gate Structure ◽  
Top Gate Structure ◽  
Active Channel
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