Electrical characteristics of bendable a-IGZO thin-film transistors with split channels and top-gate structure

2016 ◽  
Vol 159 ◽  
pp. 179-183 ◽  
Author(s):  
Hyungon Oh ◽  
Kyoungah Cho ◽  
Sukhyung Park ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Gate Structure ◽  
Top Gate Structure

scholarly journals Interface tailoring through the supply of optimized oxygen and hydrogen to semiconductors for highly stable top-gate-structured high-mobility oxide thin-film transistors

RSC Advances ◽  
2019 ◽  
Vol 9 (62) ◽  
pp. 36293-36300 ◽  
Author(s):  
Jong Beom Ko ◽  
Seung-Hee Lee ◽  
Kyung Woo Park ◽  
Sang-Hee Ko Park
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Gate Structure ◽  
Top Gate Structure ◽  
Oxide Tfts

By supplying optimized oxygen and hydrogen, the highly stable and high mobility oxide TFTs with the top-gate structure were fabricated.

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights

Dual-Functional Superoxide Precursor To Improve the Electrical Characteristics of Oxide Thin Film Transistors

2018 ◽  
Vol 10 (51) ◽  
pp. 44554-44560 ◽  
Author(s):  
Tae Soo Jung ◽  
Heesoo Lee ◽  
Hee Jun Kim ◽  
Jin Hyeok Lee ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Dual Functional
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