Design and optimization of a low voltage RF switch MEMS capacitance using genetic algorithm and Taguchi method

Purpose This paper aims to design, optimize and simulate the Radio Frequency (RF) micro electromechanical system (MEMS) Switch which is stimulated by electrostatically voltage. Design/methodology/approach The geometric structure of the switch was extracted based on the design of Taguchi-based experiment using the mathematical programming and obtaining objective function by the genetic meta-heuristic algorithm. Findings The RF parameters of the switch were calculated for the design of Taguchi-based S11 = −5.649 dB and S21 = −46.428 dB at the working frequency of 40 GHz. The pull-in voltage of the switch was 2.8 V and the axial residual stress of the proposed design was obtained 28 MPa and the design of Taguchi-based S11 = −4.422 dB and S21 = −48.705dB at the working frequency of 40 GHz. The pull-in voltage of the switch was 2.5 V and the axial residual stress of the proposed design was obtained 25 MPa. Originality/value A novel complex strategy in the design and optimization of capacitive RF switch MEMS modeling is proposed.