Nanotube MEMS: modeling extreme nanoscale devices

2009 ◽  
Author(s):  
Slava V. Rotkin
Keyword(s):  
Nanoscale Devices ◽  
Mems Modeling

Nanoscale Devices and Novel Engineered Materials

2001 ◽  
Author(s):  
S. J. Pearton ◽  
P. H. Holloway ◽  
R. K. Singh ◽  
A. F. Hebard ◽  
S. Hershfield
Keyword(s):  
Nanoscale Devices ◽  
Engineered Materials

Proposal of Ferroelectric Based Electrostatic Doping for Nanoscale Devices

2021 ◽  
pp. 1-1
Author(s):  
Siying Zheng ◽  
Jiuren Zhou ◽  
Harshit Agarwal ◽  
Jian Tang ◽  
Hongrui Zhang ◽  
...  
Keyword(s):  
Nanoscale Devices ◽  
Electrostatic Doping

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

CARBON TUBE-BASED NANOTRANSISTORS

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Conducting Channel ◽  
Carbon Tube

В статье рассмотрены нанотранзисторы и основные свойства нанотрубок. Представлен обзор CNTFET транзисторов и основные особенности технологии их изготовления. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. Проводящий канал CNTFET представляет собой углеродную нанотрубку. The article deals with nanotransistors and the main properties of nanotubes. An overview of CNTFET transistors and the main features of their manufacturing technology is presented. Carbon nanotube field effect transistors (CNTFETs) are promising nanoscale devices for implementing high-performance circuits with very dense and low power. The CNTFET conducting channel is a carbon nanotube.

Design and optimization of a low voltage RF switch MEMS capacitance using genetic algorithm and Taguchi method

Circuit World ◽  
2019 ◽  
Vol 45 (2) ◽  
pp. 53-64
Author(s):  
Alireza Ardehshiri ◽  
Gholamreza Karimi ◽  
Ramin Dehdasht-Heydari
Keyword(s):  
Residual Stress ◽  
Low Voltage ◽  
Rf Switch ◽  
Content Type ◽  
Design And Optimization ◽  
Mems Switch ◽  
Axial Residual Stress ◽  
Working Frequency ◽  
Micro Electromechanical System ◽  
Mems Modeling

Purpose This paper aims to design, optimize and simulate the Radio Frequency (RF) micro electromechanical system (MEMS) Switch which is stimulated by electrostatically voltage. Design/methodology/approach The geometric structure of the switch was extracted based on the design of Taguchi-based experiment using the mathematical programming and obtaining objective function by the genetic meta-heuristic algorithm. Findings The RF parameters of the switch were calculated for the design of Taguchi-based S11 = −5.649 dB and S21 = −46.428 dB at the working frequency of 40 GHz. The pull-in voltage of the switch was 2.8 V and the axial residual stress of the proposed design was obtained 28 MPa and the design of Taguchi-based S11 = −4.422 dB and S21 = −48.705dB at the working frequency of 40 GHz. The pull-in voltage of the switch was 2.5 V and the axial residual stress of the proposed design was obtained 25 MPa. Originality/value A novel complex strategy in the design and optimization of capacitive RF switch MEMS modeling is proposed.

Optical bistability of planar metal/dielectric nonlinear nanostructures

2006 ◽  
Vol 14 (3) ◽  
Author(s):  
R. Noskov ◽  
A. Zharov
Keyword(s):  
Dielectric Permittivity ◽  
Field Intensity ◽  
Optical Bistability ◽  
Nonlinear Response ◽  
Nanoscale Devices ◽  
Nonlinear Dielectric ◽  
Transmission Properties ◽  
All Optical ◽  
Effective Dielectric Permittivity

AbstractWe study theoretically a nonlinear response of the planar metal/dielectric nanostructures constituted from periodical array of ultra thin silver layers and the layers of Kerr-like nonlinear dielectric. We predict hysteresis-type dependences of the components of the tensor of effective dielectric permittivity on the field intensity allowing the change in material transmission properties from transparent to opaque and back at extremely low intensities of the light. It makes possible to control the light by light in all-optical nanoscale devices and circuits.

Circuit Models of Nanoscale Devices

2009 ◽  
pp. 117-127
Author(s):  
Árpád I. Csurgay ◽  
Wolfgang Porod
Keyword(s):  
Nanoscale Devices

Modeling Self-Heating Effects in Nanoscale Devices

Nanophononics ◽  
2017 ◽  
pp. 1-30
Author(s):  
Katerina Raleva ◽  
Abdul Rawoof Shaik ◽  
Suleman Sami Qazi ◽  
Robin Daugherty ◽  
Akash Laturia ◽  
...  
Keyword(s):  
Nanoscale Devices ◽  
Self Heating ◽  
Heating Effects
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