Modular design of a trap-and-atomizer device with a gold absorber for selenium collection after hydride generation

A novel device serving to trap hydrides and to volatilize the analyte to be detected by atomic absorption spectrometry, a modular trap-and-atomizer device, was invented to allow a simple replacement of the inlet arm which serves as the trap.

Time Stirring Effect of Chitosan from Shrimp Shells as Gold Absorbent

This study aims to analyze the effect of chitosan stirring time from shrimp shells as gold absorber. Experimental research was conducted in this study, where the manufacture of chitosan from shrimp shells began with demineralization (mineral removal) using 1.5 M HCl, deproteination (protein removal) using 3.5% NaOH and deacetylation (acetyl removal) using 60% HCl. The chitosan formed was weighed 0.1 gram (as many as five samples) and then stirred in a 10 ppm Au solution, with a stirring time of 0, 10, 20, 30, and 40 minutes, and its absorption ability to gold was analyzed using AAS (Atomic Absorbsion Spectroscopy) and obtained percentage of absorption respectively 24.79%, 50.89%, 45.64%, 40.52% and 37.87%. From the results of the study, it was found that there was an effect of chitosan stirring time from shrimp shells as gold absorber and the highest absorption at 10 minute stirring was 50.89%.

Deep X-Ray Mask With Integrated Actuator for 3D LIGA Process

We present a noval method of 3D microfabrication with LIGA process that utilizes a deep X-ray mask in which a microactuator is integrated. The integrated micro-actuator oscillates the X-ray absorber, which is formed on the shuttle mass of the micro-actuator, during X-ray exposures to modify that absorbed dose profile in X-ray resist, typically PMMA. 3D PMMA microstructures according to the modulated dose controur are revealed after GG development. An X-ray mask with integrated comb drive actuator is fabricated using deep reactive ion etching, absorber electroplating, and bulk micromachining with silicon-on-insulator wafer. 1 mm × 1 mm, 20 μm thick silicon shuttle mass as a mask blank is supported by four 1 mm long suspesnsion beams and is driven by the comb electrodes. A 10 μm thick, 50 μm line and spaced gold absorber pattern is electroplated on the shuttle mass before the release step. The fundamental frequency and arnplitured are around 3.6 kHz and 20 μm, respectively, for a dc bias of 100 V and an ac bias of 20 VP-P (peak-peak). Fabricated PMMA microstructure shows 15.4 μm deep, S-shaped cross section in the case of 1.6 kJ cm−3 surface dose and GG development at 35°C for 40 minutes.