Theoretical investigation of nano-photonic graphene-based waveguide

This paper reports two design thoughts about nano-scale waveguides including parallel slot structure and vertical slot structure. According to the simulation results of different schemes, the design of parallel slot structure is demonstrated to exhibit better performance. Thus, we further explore its typical characteristics based on this scheme, such as electric field distribution, effective refractive index, non-linearity, dispersion and so on. Besides, we explore the properties of the waveguide under different thicknesses of the core material. On the other hand, combining with graphene layer applied to additional bias voltage, the tunable properties of the waveguide are realized. These results can provide significant reference for photoelectronic device field and lead to a deeper insight of the physical mechanisms of graphene-based waveguides.

Near Infrared Lateral Photovoltaic Effect in LaTiO3Films

We have reported on the lateral photovoltaic effect of LaTiO3films epitaxially grown on (100) SrTiO3substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3film through SrTiO3substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

Growth of GaAsP by Solid Source Molecular Beam Epitaxy

The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized Ⅴ/Ⅲ flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.

Flexible and Ordered Macroporous PMMA Polymers Films

The ordered colloidal crystals were prepared by sedimentation of a solution of silica colloidal spheres of 298nm. Colloidal crystals were obtained after evaporation at 50°Cfor eight days while solution evaporates. These colloidal crystals were used to be templates and MMA was filled in the gap of silica spheres. SiO2/PMMA structures with a overlayer of PMMA were obtained by polymerization reaction carried out at 80°C for 24 h. After etched with the hydrofluoric acid (HF) for 24h, a piece of bluish violet film can be obtained. The film is flexible and free-standing and is enough tough to be curled to various shape. This kind of film can extend the usage of macroporous structures and have various potential applications in flexible photoelectronic device.