Photoelectronic device for measuring of small rotary angles in thromboelastography applications

2014 ◽  
Author(s):  
Shanshan Li ◽  
Dongjing Yang ◽  
Tan Xiao
Keyword(s):  
Photoelectronic Device

scholarly journals Near Infrared Lateral Photovoltaic Effect in LaTiO3Films

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Wujun Jin ◽  
Shasha Zhang ◽  
Hao Ni ◽  
Wenfeng Xiang ◽  
Jianfeng Xi ◽  
...  
Keyword(s):  
Laser Beam ◽  
Near Infrared ◽  
Photovoltaic Effect ◽  
Open Circuit ◽  
Bias Current ◽  
Sensitive Detection ◽  
Photoelectronic Device ◽  
Position Sensitive ◽  
Open Circuit Photovoltage

We have reported on the lateral photovoltaic effect of LaTiO3films epitaxially grown on (100) SrTiO3substrates. Under illumination of continuous 1064 nm laser beam on the LaTiO3film through SrTiO3substrate, the open-circuit photovoltage depended linearly on the illuminated position. The photosensitivity can be modified by bias current. These results indicated that the LaTiO3films give rise to a potentially photoelectronic device for near infrared position-sensitive detection.

Growth of GaAsP by Solid Source Molecular Beam Epitaxy

2012 ◽  
Vol 531-532 ◽  
pp. 159-162
Author(s):  
Gang Cheng Jiao ◽  
Zheng Tang Liu ◽  
Feng Shi ◽  
Lian Dong Zhang ◽  
Wei Cheng ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Flux Ratio ◽  
Internal Defect ◽  
High Quality ◽  
X Ray ◽  
Photoelectronic Device ◽  
Quality Surface

The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized Ⅴ/Ⅲ flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.

Photoelectronic device for measuring glass tube diameters

1971 ◽  
Vol 14 (5) ◽  
pp. 688-690
Author(s):  
N. M. Protsenko ◽  
V. I. Skurikhin
Keyword(s):  
Glass Tube ◽  
Photoelectronic Device

Electrical detection of surface plasmon resonance phenomena by a photoelectronic device integrated with gold nanoparticle plasmon antenna

2013 ◽  
Vol 102 (8) ◽  
pp. 083702 ◽  
Author(s):  
Tatsuya Hashimoto ◽  
Yurie Fukunishi ◽  
Bin Zheng ◽  
Yukiharu Uraoka ◽  
Takuji Hosoi ◽  
...  
Keyword(s):  
Surface Plasmon Resonance ◽  
Gold Nanoparticle ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Electrical Detection ◽  
Resonance Phenomena ◽  
Photoelectronic Device
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