nanoscale sram
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Laser Testing Methodology for Diagnosing Diverse Soft Errors in a Nanoscale SRAM-Based FPGA

2014 ◽  
Vol 61 (6) ◽  
pp. 3130-3137 ◽  
Author(s):  
Fernanda Lima Kastensmidt ◽  
Lucas Tambara ◽  
Dmitry V. Bobrovsky ◽  
Alexander A. Pechenkin ◽  
Alexander Y. Nikiforov
Keyword(s):  
Soft Errors ◽  
Testing Methodology ◽  
Nanoscale Sram

Nonrandom Device Mismatch Considerations in Nanoscale SRAM

2012 ◽  
Vol 20 (7) ◽  
pp. 1211-1220 ◽  
Author(s):  
Randy W. Mann ◽  
Terry B. Hook ◽  
Phung T. Nguyen ◽  
Benton H. Calhoun
Keyword(s):  
Device Mismatch ◽  
Nanoscale Sram

Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design

2011 ◽  
Vol 28 (1) ◽  
pp. 22-31 ◽  
Author(s):  
Fatih Hamzaoglu ◽  
Yih Wang ◽  
Pramod Kolar ◽  
Liqiong Wei ◽  
Yong-Gee Ng ◽  
...  
Keyword(s):  
Sram Design ◽  
Circuit Techniques ◽  
Nanoscale Sram

Investigation on Focused Ion Beam Induced Damage on Nanoscale SRAM by Nanoprobing

2008 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
P.K. Tan ◽  
Y.W. Goh ◽  
J.L. Cai ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Electronic Devices ◽  
Random Access ◽  
Electrical Characterization ◽  
Electrical Parameters ◽  
Access Memory ◽  
Nanoscale Sram ◽  
Site Identification ◽  
The Impact

Abstract As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective site identification during nanoprobing. This paper investigates the impact of FIB exposure on the electrical parameters of the pull-up (PU), pull-down (PD) and pass-gate (PG) transistors of 6-Transistor Static Random Access Memory (6T SRAM) cells.

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