nanoscale sram
Recently Published Documents


TOTAL DOCUMENTS

11
(FIVE YEARS 0)

H-INDEX

6
(FIVE YEARS 0)

2014 ◽  
Vol 61 (6) ◽  
pp. 3130-3137 ◽  
Author(s):  
Fernanda Lima Kastensmidt ◽  
Lucas Tambara ◽  
Dmitry V. Bobrovsky ◽  
Alexander A. Pechenkin ◽  
Alexander Y. Nikiforov

2012 ◽  
Vol 20 (7) ◽  
pp. 1211-1220 ◽  
Author(s):  
Randy W. Mann ◽  
Terry B. Hook ◽  
Phung T. Nguyen ◽  
Benton H. Calhoun

2011 ◽  
Vol 28 (1) ◽  
pp. 22-31 ◽  
Author(s):  
Fatih Hamzaoglu ◽  
Yih Wang ◽  
Pramod Kolar ◽  
Liqiong Wei ◽  
Yong-Gee Ng ◽  
...  

Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
P.K. Tan ◽  
Y.W. Goh ◽  
J.L. Cai ◽  
...  

Abstract As electronic devices shrink further in the nanometer regime, electrical characterization using nanoprobing has become increasingly important. Focused ion beam (FIB) is one useful technique that can be used to create markings for ease of defective site identification during nanoprobing. This paper investigates the impact of FIB exposure on the electrical parameters of the pull-up (PU), pull-down (PD) and pass-gate (PG) transistors of 6-Transistor Static Random Access Memory (6T SRAM) cells.


Sign in / Sign up

Export Citation Format

Share Document