Conversion efficiency of parametric generation in momentum mismatched quantum semiconductor plasma medium

2020 ◽  
Author(s):  
Swati Dubey ◽  
S. Ghosh ◽  
Kamal Jain
Keyword(s):  
Conversion Efficiency ◽  
Plasma Medium ◽  
Parametric Generation ◽  
Semiconductor Plasma ◽  
Quantum Semiconductor

Nonlinear structures: soliton, shocklike and explosive waves in quantum semiconductor plasma

2021 ◽  
Author(s):  
Haifa Al-Yousef
Keyword(s):  
Analytical Procedure ◽  
Integration Method ◽  
Fluid Model ◽  
Three Dimensional ◽  
Semiconductor Plasma ◽  
Direct Integration Method ◽  
Solution Methods ◽  
Gradient Forces ◽  
Quantum Semiconductor ◽  
Nonlinear Solutions

Abstract The properties and conditions for the appearance of some nonlinear waves in a three-dimensional semiconductor plasma are discussed, by studying the described plasma fluid system with quantum gradient forces and degraded pressures. Our analytical procedure is built on the reductive perturbation theory to obtain the Kadomtsev-Petvashvili equation for the fluid model and solving it using the direct integration method and the Bäcklund transform. Through different solution methods we got different nonlinear solutions describing different pulse profiles such as soliton, kink and explosive pulses. This model can be used to identify the potential disturbances in a semiconductor plasma.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

2018 ◽  
Vol 73 (2) ◽  
pp. 135-141 ◽  
Author(s):  
M. Siddique ◽  
M. Jamil ◽  
A. Rasheed ◽  
F. Areeb ◽  
Asif Javed ◽  
...  
Keyword(s):  
Electron Beam ◽  
Relativistic Electron ◽  
Relativistic Electron Beam ◽  
Semiconductor Plasma ◽  
Quantum Hydrodynamic Model ◽  
Bohm Potential ◽  
Plasma Species ◽  
Degeneracy Pressure ◽  
Quantum Semiconductor ◽  
Pressure Exchange

AbstractWe studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.

Nonlinear structures: Cnoidal, soliton, and periodical waves in quantum semiconductor plasma

2016 ◽  
Vol 23 (1) ◽  
pp. 012111 ◽  
Author(s):  
R. E. Tolba ◽  
N. A. El-Bedwehy ◽  
W. M. Moslem ◽  
S. K. El-Labany ◽  
M. E. Yahia
Keyword(s):  
Nonlinear Structures ◽  
Semiconductor Plasma ◽  
Quantum Semiconductor

Propagation and interaction of two soliton in a quantum semiconductor plasma with exchange correlation effects

2017 ◽  
Vol 24 (6) ◽  
pp. 062103 ◽  
Author(s):  
Sourav Choudhury ◽  
Tushar Kanti Das ◽  
Malay Kr. Ghorui ◽  
Prasanta Chatterjee
Keyword(s):  
Correlation Effects ◽  
Semiconductor Plasma ◽  
Exchange Correlation ◽  
Quantum Semiconductor

REVIEW ON PARAMETRIC GENERATION OF TERAHERTZ WAVE: FROM MAXIMUM CONVERSION EFFICIENCY TO NEW ROUTE TO COMPACT AND PORTABLE SOURCES

2011 ◽  
Vol 20 (03) ◽  
pp. 249-270 ◽  
Author(s):  
YUJIE J. DING ◽  
PU ZHAO ◽  
SRINIVASA RAGAM ◽  
DA LI ◽  
IOULIA B. ZOTOVA
Keyword(s):  
Output Power ◽  
Conversion Efficiency ◽  
Laser Cavity ◽  
Terahertz Wave ◽  
Solid State Laser ◽  
Parametric Generation ◽  
Maximum Conversion ◽  
Laser Crystals ◽  
Maximum Conversion Efficiency ◽  
Photon Conversion

We review the recent progress made by our group on power scaling of THz waves and the development of compact and portable THz sources. By reversely stacking GaP plates, we were able to improve the photon conversion efficiency from 25% to 40%, which is the record-high value. As the number of the stacked GaP plates was increased from 4 to 5, the output power was decreased. This is the evidence on back conversion. In order to make our THz source truly compact and portable, we investigated a new route to THz generation by mixing two frequencies generated by a single Nd :YLF solid-state laser. After two Nd :YLF crystals were introduced in the laser cavity, the output power was scaled up to 4.5 μW. Such a configuration exhibits versatile characteristics such as the generation of different THz frequencies by combining two different laser crystals.

Selection of Optimum Nonlinear Crystals for Efficient Parametric Generation and Sensitive Detection of Monochromatic ns THz Pulses

2007 ◽  
Vol 1016 ◽  
Author(s):  
Yujie J. Ding
Keyword(s):  
Conversion Efficiency ◽  
Peak Power ◽  
Difference Frequency Generation ◽  
Beam Parameter ◽  
High Peak Power ◽  
Parametric Generation ◽  
Output Wavelength ◽  
Output Peak Power ◽  
Photon Conversion ◽  
Selection Of

AbstractWe report our recent progress made on the development of widely-tunable monochromatic THz sources. They have been realized based on difference-frequency generation (DFG) in GaSe, ZnGeP2, and GaP crystals, respectively. Using a GaSe crystal, the output wavelength was tuned continuously in the range from 66.5 µm to 5664 µm (from 150 cm-1 to 1.77 cm-1) with the peak power reaching 389 W. Such a high peak power corresponds to a conversion efficiency of about 0.1% (a photon conversion efficiency of 19%). A further optimization on the THz beam parameter may result in an output peak power of a few kW. Within the range of 100-250 µm the output peak powers were higher than 100 W. We have also investigated THz frequency upconversion in GaSe, ZnGeP2, and GaP crystals. Such a parametric process has a potential for detecting THz pulses at room temperature or just using a thermoelectric cooler. The minimum detectable energy per pulse was measured to be 245 pJ, which corresponds to a noise equivalent energy of 77.5 . A further optimization of the process can reduce this value down to 1 .

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