Gallium arsenide antimonide: The possibility of lattice‐matched LPE growth on InP substrates

1978 ◽  
Vol 49 (12) ◽  
pp. 5920-5923 ◽  
Author(s):  
Clifton G. Fonstad ◽  
Maurice Quillec ◽  
Stephen Garone
Keyword(s):  
Gallium Arsenide ◽  
Gallium Arsenide Antimonide ◽  
Inp Substrates ◽  
Lattice Matched

scholarly journals Anomalous Stranski-Krastanov growth of (111)-oriented quantum dots with tunable wetting layer thickness

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Christopher F. Schuck ◽  
Simon K. Roy ◽  
Trent Garrett ◽  
Qing Yuan ◽  
Ying Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Self Assembly ◽  
Tensile Strain ◽  
Quantum Systems ◽  
Growth Mode ◽  
Wetting Layer ◽  
Precise Control ◽  
Growth Regime ◽  
Inp Substrates ◽  
Lattice Matched

AbstractDriven by tensile strain, GaAs quantum dots (QDs) self-assemble on In0.52Al0.48As(111)A surfaces lattice-matched to InP substrates. In this study, we show that the tensile-strained self-assembly process for these GaAs(111)A QDs unexpectedly deviates from the well-known Stranski-Krastanov (SK) growth mode. Traditionally, QDs formed via the SK growth mode form on top of a flat wetting layer (WL) whose thickness is fixed. The inability to tune WL thickness has inhibited researchers’ attempts to fully control QD-WL interactions in these hybrid 0D-2D quantum systems. In contrast, using microscopy, spectroscopy, and computational modeling, we demonstrate that for GaAs(111)A QDs, we can continually increase WL thickness with increasing GaAs deposition, even after the tensile-strained QDs (TSQDs) have begun to form. This anomalous SK behavior enables simultaneous tuning of both TSQD size and WL thickness. No such departure from the canonical SK growth regime has been reported previously. As such, we can now modify QD-WL interactions, with future benefits that include more precise control of TSQD band structure for infrared optoelectronics and quantum optics applications.

High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

1995 ◽  
Vol 66 (4) ◽  
pp. 442-444 ◽  
Author(s):  
B. Lambert ◽  
Y. Toudic ◽  
Y. Rouillard ◽  
M. Gauneau ◽  
M. Baudet ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
High Reflectivity ◽  
Inp Substrates ◽  
Lattice Matched

Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Lattice Matched

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

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