JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics

ABSTRACTThe principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented

H-Atom Assisted jet Vapor Deposition of Parylene-n polymer

We describe a new approach to deposition of Parylene N thin films. It utilizes a small scale, sonic speed, Jet Vapor DepositionTM (JVDTM) process technology in place of the conventional larger scale, slow flow, Gorham apparatus. It employs a simple but powerful strategy to promote radical polymerization: exposure of the growing film, during deposition, to a high flux of atomic hydrogen. We believe that H atoms have two effects: they clean oxygen from the substrate, and they promote crosslinking in the Parylene film by abstraction of H atoms from the Parylene ring or side groups. With “H atom assisted JVD” Parylene N deposits and adheres even on warm substrates; it has reduced index of refraction and dielectric constant.