JVD Silicon Nitride and Titanium Oxide as Advanced Gate Dielectrics

1999 ◽  
Vol 567 ◽  
Author(s):  
T.P. Ma
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Jet Vapor Deposition ◽  
Mos Gate

ABSTRACTThe principle and practice of the Jet-Vapor Deposition (JVD) technique for thin-film deposition will be introduced, followed by a presentation of the properties of ultra-thin JVD silicon nitride (designated SiN in this paper) as advanced MOS gate dielectric. Recent results on the JVD TiO2/SiN gate stack will also be presented

scholarly journals Aspects of thin film deposition on granulates by physical vapor deposition

2016 ◽  
Vol 70 (11) ◽  
Author(s):  
Andreas Eder ◽  
Gerwin H.S. Schmid ◽  
Harald Mahr ◽  
Christoph Eisenmenger-Sittner
Keyword(s):  
Thin Film ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Thin Film Deposition ◽  
Film Deposition
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