Influence of Parasitic Inductances on Switching Performance of SiC MOSFET

Compared to the silicon power devices, silicon carbide device has shorter switch time. Hence, as a result of the faster transition of voltage (dv/dt) and current (di/dt) in SiC MOSFET, the influence of parasitic parameters on SiC MOSFET’s switching transient is more serious. This paper gives an experimental study of the influence of parasitic inductance on SiC MOSFET’s switching characteristics. Most significance parameters are the parasitic inductances of gate driver loop and power switching loop. These include the SiC MOSFET package’s parasitic inductance, interconnect inductance and the parasitic inductance of dc link PCB trace. This paper therefore focuses on analysis and comparison of different parasitic parameters under various operation conditions in terms of their effect on overvoltage, overcurrent and switching power loss.

Wide Band Gap Semiconductor Technology for Energy Efficiency

The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain industry acceptance. However, hurdles still exist in achieving widespread market acceptance, on a par with traditional silicon power devices. Primary challenges include reducing device costs and the expansion of a workforce trained in their use. The Department of Energy (DOE) is actively fostering development activities to expand application spaces, achieve acceptable cost reduction targets and grow the acceptance of WBG devices to realize DOEs core missions of more efficient energy generation, greenhouse gas reduction and energy security within the U.S. This paper discusses currently funded activities and application areas that are suitable for WBG introduction. A detailed cost roadmap for SiC device introduction is also presented.

System-Level Packaging of Wide Bandgap Inverters for Electric Traction Drive Vehicles

In this paper, we describe the system-level packaging of a 30 kW continuous, 55 kW peak, traction inverter to showcase the electro-thermal-mechanical performance enhancements of silicon carbide (SiC), a wide bandgap (WBG) semiconductor, over silicon. Higher efficiency, larger gravimetric and volumetric power densities, and smaller thermal management system requirements may be achieved through higher operating junction temperatures afforded by SiC versus silicon power devices. By applying advanced system-level packaging techniques, high-temperature control circuitry, utilizing 105°C-rated capacitors, and reducing the number of system interconnects and attaches to enable higher system reliability, a substantial cost reduction from the die level to the system level can be demonstrated by completely eliminating an electric vehicle’s secondary low-temperature cooling loop. The endgame is to reduce the traction inverter size (≥ 13.4 kW [peak]/L), weight (≥ 14.1 kW [peak]/kg), and cost (≤ $182/100,000) relative to output power while maintaining 15-year reliability metrics [1].

Commercialization of High 600V GaN-on-Silicon Power Devices

With power conversion losses endemic in all areas of electricity consumption, broadlycategorized into motion control (accounting for around 50% of total electrical energy use), lighting,air conditioning, and information technology, consumers, governments and utilities are finding waysto achieve higher efficiency. Manufacturers of data servers, telecom systems, solar power invertersand drives for motor control are focused on reducing power conversion losses while simultaneouslyshrinking the size of power systems. Although silicon has historically been the base device materialused by the power conversion industry, it is rapidly reaching its physical performance limits. GaNsemiconductors solutions reduce power conversion loss by over 50% in a significantly smaller formfactor and at a lower cost, when device design, fabrication technology and application design areholistically combined to deliver superior end products.