GaN-on-Silicon Power Devices: How to Dislodge Silicon-Based Power MOSFETs [Expert View]

2017 ◽  
Vol 4 (1) ◽  
pp. 50-52
Author(s):  
Alex Lidow
Keyword(s):  
Power Devices ◽  
Power Mosfets ◽  
Silicon Power Devices ◽  
Silicon Based

Critical Technical Issues in High Voltage SiC Power Devices

2008 ◽  
Vol 600-603 ◽  
pp. 895-900 ◽  
Author(s):  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Robert Callanan ◽  
Craig Capell ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Carrier Mobility ◽  
Negative Charge ◽  
State Of The Art ◽  
Power Devices ◽  
Power Mosfets ◽  
Large Numbers ◽  
Technical Issues ◽  
The Difference ◽  
Difficult Issue

In this paper, we review the state of the art of SiC switches and the technical issues which remain. Specifically, we will review the progress and remaining challenges associated with SiC power MOSFETs and BJTs. The most difficult issue when fabricating MOSFETs has been an excessive variation in threshold voltage from batch to batch. This difficulty arises due to the fact that the threshold voltage is determined by the difference between two large numbers, namely, a large fixed oxide charge and a large negative charge in the interface traps. There may also be some significant charge captured in the bulk traps in SiC and SiO2. The effect of recombination-induced stacking faults (SFs) on majority carrier mobility has been confirmed with 10 kV Merged PN Schottky (MPS) diodes and MOSFETs. The same SFs have been found to be responsible for degradation of BJTs.

scholarly journals On the Lifetime Estimation of SiC Power MOSFETs for Motor Drive Applications

Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 324
Author(s):  
Carmelo Barbagallo ◽  
Santi Agatino Rizzo ◽  
Giacomo Scelba ◽  
Giuseppe Scarcella ◽  
Mario Cacciato
Keyword(s):  
Electric Drive ◽  
Average Power ◽  
Estimation Procedure ◽  
General Purpose ◽  
Operating Conditions ◽  
Power Losses ◽  
Power Devices ◽  
Lifetime Estimation ◽  
Power Mosfets ◽  
Mission Profile

This work presents a step-by-step procedure to estimate the lifetime of discrete SiC power MOSFETs equipping three-phase inverters of electric drives. The stress of each power device when it is subjected to thermal jumps from a few degrees up to about 80 °C was analyzed, starting from the computation of the average power losses and the commitment of the electric drive. A customizable mission profile was considered where, by accounting the working conditions of the drive, the corresponding average power losses and junction temperatures of the SiC MOSFETs composing the inverter can be computed. The tool exploits the Coffin–Manson theory, rainflow counting, and Miner’s rule for the lifetime estimation of the semiconductor power devices. Different operating scenarios were investigated, underlying their impact on the lifetime of SiC MOSFETs devices. The lifetime estimation procedure was realized with the main goal of keeping limited computational efforts, while providing an effective evaluation of the thermal effects. The method enables us to set up any generic mission profile from the electric drive model. This gives us the possibility to compare several operating scenario of the drive and predict the worse operating conditions for power devices. Finally, although the lifetime estimation tool was applied to SiC power MOSFET devices for a general-purpose application, it can be extended to any type of power switch technology.

Wide Band Gap Semiconductor Technology for Energy Efficiency

2016 ◽  
Vol 858 ◽  
pp. 797-802 ◽  
Author(s):  
Anant Agarwal ◽  
Woong Je Sung ◽  
Laura Marlino ◽  
Pawel Gradzki ◽  
John Muth ◽  
...  
Keyword(s):  
Cost Reduction ◽  
Wide Band ◽  
Wide Bandgap ◽  
Department Of Energy ◽  
Semiconductor Technology ◽  
Power Devices ◽  
Wide Band Gap ◽  
Efficient Energy ◽  
Greenhouse Gas Reduction ◽  
Silicon Power Devices

The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain industry acceptance. However, hurdles still exist in achieving widespread market acceptance, on a par with traditional silicon power devices. Primary challenges include reducing device costs and the expansion of a workforce trained in their use. The Department of Energy (DOE) is actively fostering development activities to expand application spaces, achieve acceptable cost reduction targets and grow the acceptance of WBG devices to realize DOEs core missions of more efficient energy generation, greenhouse gas reduction and energy security within the U.S. This paper discusses currently funded activities and application areas that are suitable for WBG introduction. A detailed cost roadmap for SiC device introduction is also presented.

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