Estimation and analysis of the influence of ionizing radiation on the operation of nanosatellite onboard radio electronic equipment

The paper presents the results of a calculation aimed to study the influence of ionizing, bremsstrahlung radiation on the operation of a nanosatellite obtained during the implementation of the project 0777-2020-0018 in 2020. A comparative analysis of the results of calculating the specific ionization and radiation energy losses of protons (from 0.1 to 400 MeV) and electrons (from 0.04 to 7 MeV), as well as their path lengths in aluminum according to the formulas of various authors and the database of materials of the National Institute of Standards and Technologies is presented. Based on the analysis results, the annual dose in the aluminum structure of the SamSat ION nanosatellite in a circular sun-synchronous orbit (SSO) is calculated. All calculations are based on the data of the energy spectra of protons and electrons of the SSO given in the Information system Spenvis of the European Space Agency. The results of calculating the integral fluxes in aluminum under the action of protons and electrons of a circular SSO for different thicknesses are obtained, and the fraction of passed particles is shown in the approximation of a single-layer stack. The radiation resistance of the electronic elements ISL70321SEH, ISL73321SEH and Virtex-4QV, Virtex-5QV included in the SamSat ION avionics and its ability to operate during a year was assessed.

Estimation and analysis of the influence of ionizing radiation on the nanosatellite onboard radio electronic equipment functioning.

The paper presents the results of a calculation to study the influence of ionizing, bremsstrahlung radiation on the functioning of a nanosatellite. A comparative analysis of the results of calculating the specific ionization and radiation energy losses of protons (from 0.1 to 400 MeV) and electrons (from 0.04 to 7 MeV), as well as their path lengths in aluminum according to the formulas of various authors and the database of materials of the National Institute of Standards and Technologies is presented. Based on the analysis results, the annual dose in the aluminum structure of the SamSat-ION nanosatellite in a circular sun-synchronous orbit (SSO) is calculated. All calculations are based on the data of the energy spectra of protons and electrons of the SSO given in the "Information system Spenvis of the European Space Agency". The results of calculating the integral fluxes in aluminum under the action of protons and electrons of a circular SSO for different thicknesses are obtained, and the fraction of passed particles is shown in the approximation of a single-layer stack. Estimation of the radiation resistance of the electronic elements ISL70321SEH, ISL73321SEH and Virtex - 4QV, Virtex -5QV included in the SamSat - ION in the approximation of a double-layer stack was made for various thickness of Si and its ability to operate during the year.

Assessment of probabilistic characteristics of complex radiotechnical systems depending on quantity and quality of electronic elements within them

The article describes possible ways of improvement of assessment means of probabilistic characteristics of various complex radiotechnical systems. These ways are presented as practical examples of application of the methodology of assessment of a probability of failure of a given number of electronic elements within a complex radiotechical system depending on a maxi-mum likelihood of failure of one electronic element and the overall number of elements within the system. In actual practice, the proposed methodology is implemented through the software «Analysis and assessment of probabilistic characteristics of systems»

Review on the Integration of Microelectronics for E-Textile

Modern electronic textiles are moving towards flexible wearable textiles, so-called e-textiles that have micro-electronic elements embedded onto the textile fabric that can be used for varied classes of functionalities. There are different methods of integrating rigid microelectronic components into/onto textiles for the development of smart textiles, which include, but are not limited to, physical, mechanical, and chemical approaches. The integration systems must satisfy being flexible, lightweight, stretchable, and washable to offer a superior usability, comfortability, and non-intrusiveness. Furthermore, the resulting wearable garment needs to be breathable. In this review work, three levels of integration of the microelectronics into/onto the textile structures are discussed, the textile-adapted, the textile-integrated, and the textile-based integration. The textile-integrated and the textile-adapted e-textiles have failed to efficiently meet being flexible and washable. To overcome the above problems, researchers studied the integration of microelectronics into/onto textile at fiber or yarn level applying various mechanisms. Hence, a new method of integration, textile-based, has risen to the challenge due to the flexibility and washability advantages of the ultimate product. In general, the aim of this review is to provide a complete overview of the different interconnection methods of electronic components into/onto textile substrate.

The Solution for the Thermographic Measurement of the Temperature of a Small Object

This article describes the measuring system and the influence of selected factors on the accuracy of thermographic temperature measurement using a macrolens. This method enables thermographic measurement of the temperature of a small object with an area of square millimeters as, e.g., electronic elements. Damage to electronic components is often preceded by a rise in temperature, and an effective way to diagnose such components is the use of a thermographic camera. The ability to diagnose a device under full load makes thermography a very practical method that allows us to assess the condition of the device during operation. The accuracy of such a measurement depends on the conditions in which it is carried out. The incorrect selection of at least one parameter compensating the influence of the factor occurring during the measurement may cause the indicated value to differ from the correct value. This paper presents the basic issues linked to thermographic measurements and highlights the sources of errors. A measuring stand which enables the assessment of the influence of selected factors on the accuracy of thermographic measurement of electronic elements with the use of a macrolens is presented.

Review on the Integration of Microelectronics for E-Textile

Modern electronic textiles are moving towards flexible wearable textiles, so-called e-textiles that have micro-electronic elements embedded onto the textile fabric that can be used for varied classes of functionalities. There are different methods of integrating rigid microelectronic components into/onto textiles for the development of smart textiles, which include, but are not limited to, physical, mechanical and chemical approaches. The integration systems must satisfy being flexible, lightweight, stretchable and washable to offer a superior usability, comfortability and non-intrusiveness. Furthermore, the resulting wearable garment needs to be breathable. In this review work, three levels of integration of the microelectronics into/onto the textile structures are discussed, the textile-adapted, the textile-integrated, and the textile-based integration. The textile-integrated and the textile- adapted e-textiles have failed to efficiently meet being flexible and washable. To overcome the above problems, researchers studied the integration of microelectronics into/onto textile at fiber or yarn level applying various mechanisms. Hence, a new method of integration, textile-based, has risen to the challenge due to the flexibility and washability advantages of the ultimate product. In general, the aim of this review is to provide a complete overview of the different interconnection methods of electronic components into/onto textile substrate.

Review on the Integration of Microelectronics for E-textile

Modern electronic textiles are moving towards flexible wearable textiles, so-called e-textiles that have micro-electronic elements embedded onto the textile fabric that can be used for varied classes of functionalities. There are different methods of integrating rigid microelectronic components into/onto textiles for the development of smart textiles, which include, but are not limited to, physical, mechanical and chemical approaches. The integration systems must satisfy being flexible, lightweight, stretchable and washable to offer a superior usability, comfortability and non-intrusiveness. Furthermore, the resulting wearable garment needs to be breathable. In this review work, three levels of integration of the microelectronics into/onto the textile structures are discussed, the textile-adapted, the textile-integrated, and the textile-based integration. The textile-integrated and the textile- adapted e-textiles have failed to efficiently meet being flexible and washable. To overcome the above problems, researchers studied the integration of microelectronics into/onto textile at fiber or yarn level applying various mechanisms. Hence, a new method of integration, textile-based, has risen to the challenge due to the flexibility and washability advantages of the ultimate product. In general, the aim of this review is to provide a complete overview of the different interconnection methods of electronic components into/onto textile substrate.

A random signal generator by using analog electronics

The describing function theory is a powerful mathematical tool to predict oscillations in non-linear dynamical systems. This theory is here invoked to design a random signal generator and realized by using analog electronic elements. Then, and according to experimental results, histograms of the resultant signal are shown along with the generated signal in the time domain. Finally, the proposed electronic circuit is simple and cheap to construct.