Secondary Electron Emission and Photoemission from Negative Electron Affinity Semiconductor With Large Mean Escape Depth of Excited Electrons

2021 ◽  
Author(s):  
Ai-Gen Xie ◽  
Hong-Jie Dong ◽  
Yi-Fan Liu ◽  
Yue-Lin Gan
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Negative Electron Affinity ◽  
Escape Depth ◽  
Mean Escape Depth

Characterization of Secondary Electron Emission from Materials with Low or Negative Electron Affinity

1998 ◽  
Vol 509 ◽  
Author(s):  
J.E. Yater ◽  
A. Shih
Keyword(s):  
Energy Distribution ◽  
Surface Properties ◽  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Surface Composition ◽  
Secondary Electron Emission ◽  
Emission Characteristics ◽  
Negative Electron Affinity ◽  
Diamond Surfaces

AbstractSecondary electron emission spectroscopy is used to examine the emission characteristics of diamond films as a function of the bulk and surface properties. We find significant variation in the secondary electron yields measured from diamond surfaces even when energy distribution measurements indicate that a low or negative electron affinity is present. In particular, we observe that the material properties, such as bulk and surface uniformity, surface composition, and impurity and defect concentrations, have a strong affect on the secondary electron yield measurements. Furthermore, the energy distribution of the emitted electrons is found to vary with adsorbate species. In certain cases, the energy distribution changes with adsorbate coverage even though the measured electron intensity remains unchanged. From an analysis of the data, we identify bulk and surface properties needed to optimize the emission characteristics.

THEORETICAL RESEARCH OF SECONDARY ELECTRON EMISSION FROM NEGATIVE ELECTRON AFFINITY SEMICONDUCTORS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850181 ◽  
Author(s):  
AI-GEN XIE ◽  
YANG YU ◽  
YA-YI CHEN ◽  
YU-QING XIA ◽  
HAO-YU LIU
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Electron ◽  
Theoretical Research ◽  
Negative Electron Affinity ◽  
Secondary Electron Yield ◽  
Electron Yield ◽  
Yield Formula

Based on primary range [Formula: see text], relationships among parameters of secondary electron yield [Formula: see text] and the processes and characteristics of secondary electron emission (SEE) from negative electron affinity (NEA) semiconductors, the universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors were deduced, respectively; where [Formula: see text] is incident energy of primary electron. According to the characteristics of SEE from NEA semiconductors with [Formula: see text], [Formula: see text], deduced universal formulas for [Formula: see text] at [Formula: see text] and at [Formula: see text] for NEA semiconductors and experimental data, special formulas for [Formula: see text] at 0.5[Formula: see text] of several NEA semiconductors with [Formula: see text] were deduced and proved to be true experimentally, respectively; where [Formula: see text] is the [Formula: see text] at which [Formula: see text] reaches maximum secondary electron yield. It can be concluded that the formula for [Formula: see text] of NEA semiconductors with [Formula: see text] was deduced and could be used to calculate [Formula: see text], and that the method of calculating the 1/[Formula: see text] of NEA semiconductors with [Formula: see text] is plausible; where [Formula: see text] is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of emitter, and 1/[Formula: see text] is mean escape depth of secondary electron.

Surface damage effects on secondary electron emission From the negative electron affinity diamond surface

1995 ◽  
Vol 416 ◽  
Author(s):  
D. P. Malta ◽  
J. B. Posthill ◽  
T. P. Humphreys ◽  
M. J. Mantini ◽  
R. J. Markunas
Keyword(s):  
Electron Affinity ◽  
Electron Emission ◽  
Photoelectron Spectroscopy ◽  
Secondary Electron ◽  
Natural Diamond ◽  
Hydrogen Plasma ◽  
Secondary Electron Emission ◽  
Surface Damage ◽  
Diamond Surface ◽  
Negative Electron Affinity

ABSTRACTThe effects of surface damage on the secondary electron emission characteristics of a natural diamond (100) surface have been investigated using ultraviolet photoelectron spectroscopy and scanning electron microscopy. Surface damage was intentionally induced by abrading the (100) diamond face with diamond paste. Removal of the damage was achieved by a sequence of ion implantation, graphitization, electrochemical etching and oxygen/argon plasma etching. Prior to characterization performed between steps in the sequence, the surface was hydrogenated by exposure to a hydrogen plasma in attempts to create a negative electron affinity surface condition. Upon removal of the surface damage, the secondary electron yield from the negative electron affinity surface was enhanced by a factor of ˜20 over that from the damaged negative electron affinity surface.

Thickness Dependence in Secondary Electron Emission from Carbon

1975 ◽  
Vol 33 ◽  
pp. 100-101
Author(s):  
D. Voreades
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Secondary Emission ◽  
Secondary Electrons ◽  
Emission Process ◽  
Backscattered Electrons ◽  
Escape Depth ◽  
Mode Of Operation ◽  
Scanning Electron

Secondary electrons are used in making topographical pictures of specimens in the scanning electron microscope. A better understanding of the secondary emission process will contribute in improving the resolution in this mode of operation.Recent experiments have indicated first that the escape depth of secondary electrons is a few atomic layers at the surface of the solid and second that the backscattered electrons are much more efficient in producing secondaries than the incoming ones. The results vary considerably. However, any model that one makes, for example similar to that of Jonker, consistent with these recent experimental results, will have the thickness as an important parameter.

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