Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs

2013 ◽  
pp. 442-445
Author(s):  
Robab Madadi ◽  
Rahim Faez ◽  
Behrouz Behtoee
Keyword(s):  
Physical Parameters ◽  
Composite Channel ◽  
Noise Characteristics ◽  
Microwave Noise

Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

2005 ◽  
Vol 26 (8) ◽  
pp. 521-523 ◽  
Author(s):  
Zhiqun Cheng ◽  
Jie Liu ◽  
Yugang Zhou ◽  
Yong Cai ◽  
K.J. Chen ◽  
...  
Keyword(s):  
Composite Channel ◽  
High Linearity ◽  
Noise Characteristics ◽  
Gan Hemts ◽  
Microwave Noise

Microwave noise characteristics of GaAs-based HBTs

1999 ◽  
Author(s):  
Hidenori Shimawaki ◽  
Masafumi Kawanaka ◽  
Norio Goto
Keyword(s):  
Noise Characteristics ◽  
Microwave Noise

MICROWAVE FLUCTUATIONS IN ELECTRON GAS WITH PAIR COLLISIONS

2001 ◽  
Vol 01 (01) ◽  
pp. R81-R100 ◽  
Author(s):  
R. KATILIUS ◽  
A. MATULIONIS
Keyword(s):  
Monte Carlo ◽  
Electric Fields ◽  
Monte Carlo Methods ◽  
Recent Progress ◽  
Electron Gas ◽  
Experimental Results ◽  
Hot Electron ◽  
Electron Collisions ◽  
Noise Characteristics ◽  
Microwave Noise

The paper overviews recent progress in the field of hot-electron microwave noise and fluctuations with an emphasis on contribution due to inter-electron collisions that are inevitable in doped semi-conductors at a relatively high density of mobile electrons. A special attention is paid to the problem of hot-electron diffusion in the range of electric fields where inter-electron collisions are important and Price's relation connecting diffusion and noise characteristics is not necessarily valid. The basic and up-to-date information is presented on methods and advances in the field where combined analytic and Monte Carlo methods of investigation are indispensable while seeking coherent understanding of experimental results.

Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate

2011 ◽  
Vol 32 (3) ◽  
pp. 318-320 ◽  
Author(s):  
Z. H. Liu ◽  
G. I. Ng ◽  
S. Arulkumaran ◽  
Y. K. T. Maung ◽  
K. L. Teo ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Temperature Dependent ◽  
Noise Characteristics ◽  
Microwave Noise

Effect of strain on microwave noise characteristics in In0.52Al0.48As/InxGa1−xAs (0.53 ≤x ≤ 0.80)

1993 ◽  
Vol 29 (15) ◽  
pp. 1338 ◽  
Author(s):  
K.B. Chough ◽  
W.-P. Hong ◽  
L. Florez ◽  
J.I. Song
Keyword(s):  
Noise Characteristics ◽  
Microwave Noise
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