Effect of strain on microwave noise characteristics in In0.52Al0.48As/InxGa1−xAs (0.53 ≤x ≤ 0.80)

1993 ◽  
Vol 29 (15) ◽  
pp. 1338 ◽  
Author(s):  
K.B. Chough ◽  
W.-P. Hong ◽  
L. Florez ◽  
J.I. Song
1999 ◽  
Author(s):  
Hidenori Shimawaki ◽  
Masafumi Kawanaka ◽  
Norio Goto

2001 ◽  
Vol 01 (01) ◽  
pp. R81-R100 ◽  
Author(s):  
R. KATILIUS ◽  
A. MATULIONIS

The paper overviews recent progress in the field of hot-electron microwave noise and fluctuations with an emphasis on contribution due to inter-electron collisions that are inevitable in doped semi-conductors at a relatively high density of mobile electrons. A special attention is paid to the problem of hot-electron diffusion in the range of electric fields where inter-electron collisions are important and Price's relation connecting diffusion and noise characteristics is not necessarily valid. The basic and up-to-date information is presented on methods and advances in the field where combined analytic and Monte Carlo methods of investigation are indispensable while seeking coherent understanding of experimental results.


2011 ◽  
Vol 32 (3) ◽  
pp. 318-320 ◽  
Author(s):  
Z. H. Liu ◽  
G. I. Ng ◽  
S. Arulkumaran ◽  
Y. K. T. Maung ◽  
K. L. Teo ◽  
...  

1997 ◽  
Vol 33 (12) ◽  
pp. 1092 ◽  
Author(s):  
W. Kruppa ◽  
J.B. Boos ◽  
D. Park ◽  
B.R. Bennett ◽  
R. Bass

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