Temperature-dependent microwave noise characteristics of AlGaN/GaN HEMTs on silicon substrate

2008 ◽  
Author(s):  
Z.H. Liu ◽  
S. Arulkumaran ◽  
G.I. Ng ◽  
T. Xu
Keyword(s):  
Silicon Substrate ◽  
Temperature Dependent ◽  
Noise Characteristics ◽  
Gan Hemts ◽  
Microwave Noise

Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon Substrate

2011 ◽  
Vol 32 (3) ◽  
pp. 318-320 ◽  
Author(s):  
Z. H. Liu ◽  
G. I. Ng ◽  
S. Arulkumaran ◽  
Y. K. T. Maung ◽  
K. L. Teo ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Temperature Dependent ◽  
Noise Characteristics ◽  
Microwave Noise

Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs

2005 ◽  
Vol 26 (8) ◽  
pp. 521-523 ◽  
Author(s):  
Zhiqun Cheng ◽  
Jie Liu ◽  
Yugang Zhou ◽  
Yong Cai ◽  
K.J. Chen ◽  
...  
Keyword(s):  
Composite Channel ◽  
High Linearity ◽  
Noise Characteristics ◽  
Gan Hemts ◽  
Microwave Noise
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